Web Release Date: November 13,
Atmospheric Pressure Chemical Vapor Deposition of Titanium Aluminum Nitride Films
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, and Ford Motor Company, Glass Division, Dearborn, Michigan 48120
Received March 16, 1999
Revised Manuscript Received October 6, 1999
Abstract:
The atmospheric pressure chemical vapor deposition of titanium aluminum nitride films
was accomplished using a three-precursor system comprised of titanium tetrachloride, tert-butylamine, and trimethylaluminum at a substrate temperature of 600 
C. Smooth, specular,
and highly adherent violet-black films were obtained. The aluminum content of the films
varied with trimethylaluminum flow rate up to a maximum aluminum/titanium ratio of
about 1:1. Higher aluminum flow rates afforded rough, poorly adherent coatings. Films
having the compositions Ti0.83Al0.17N0.89, Ti0.69Al0.31N0.85, and Ti0.52Al0.48N1.38 were analyzed
in detail. The films were characterized by X-ray powder diffraction, X-ray photoelectron
spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, atomic
force microscopy, and resistivity measurements. The films were subjected to nanoindentation
hardness testing and high-temperature oxidation studies. The Ti1-xAlxN films were found
to be harder and more resistant to oxidation by ambient atmosphere than TiN films deposited
from titanium tetrachloride and tert-butylamine at 600 C. The dependence of the film
properties on the aluminum content is discussed.
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