Chem. Mater., 19 (25), 62666276 10.1021/cm702226x
Web Release Date: November 13, 2007

Copyright © 2007 American Chemical Society

Emissive Erbium-Doped Silicon and Germanium Oxide Nanofibers Derived from an Electrospinning Process

Ji Wu and Jeffery L. Coffer*

Department of Chemistry, Texas Christian University, Fort Worth, Texas 76129

Received August 7, 2007

Revised Manuscript Received October 4, 2007

Abstract:

Use of sol–gel condensation reactions with the proper precursors, in conjunction with electrospinning methods, leads to the facile formation of one-dimensional nanofibers of silicon or germanium dioxide doped with erbium. These nanowires are characterized by a combination of scanning and transmission electron microscopies, energy dispersive X-ray analysis, FT IR spectroscopy, X-ray diffraction, and photoluminescence spectroscopy. By comparing such structures with comparably sized nanofibers of erbium oxide (Er2O3), the influence of oxide matrix and erbium concentration on Er3+ luminescence in the near-infrared at 1540 nm is examined. Furthermore, an analysis of the luminescence excitation spectra of Er-doped GeO2 nanofibers prepared by the above route with Er-doped GeO2 NWs and Er-doped Ge NWs prepared by a different vapor–liquid–solid pathway suggests a common excitation mechanism of erbium ions in these structures assisted by GeOx through a carrier-mediated process.

Download the full text: PDF | HTML