Green and Red Emissions at Room Temperature on Er-Doped GaN Submicrometer Rods Synthesized by a Simple Chemical Vapor Deposition Technique

Chem. Mater., 19 (26), 6543–6547 10.1021/cm702441y
Web Release Date: November 30, 2007

Green and Red Emissions at Room Temperature on Er-Doped GaN Submicrometer Rods Synthesized by a Simple Chemical Vapor Deposition Technique

Joan J. Carvajal,^*^†^‡ Magdalena Aguiló,^‡ Francesc Díaz,^‡ and J. Carlos Rojo^†^§

Department of Materials Science and Engineering, State University of New York, Stony Brook, New York 11794, and Physics and Crystallography of Materials (FiCMA), Universitat Rovira i Virgili, Tarragona 43007, Spain

Received August 27, 2007

Revised Manuscript Received October 23, 2007

Abstract:

Er-doped GaN submicron rods have been synthesized on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods with excitation below the energy of the bandgap of the semiconductor have been recorded.

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