Web Release Date: January 25,
Comparative Study on MoO3 and HxMoO3 Nanobelts: Structure and Electric Transport
Nanotechnology Laboratory, Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China, and Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
Received October 11, 2007
Revised Manuscript Received November 29, 2007
Abstract:
In this study, the suspension of MoO3 nanobelts was first prepared in a hydrothermal way from Mo powders and H2O2 solution, which could be transformed into the suspension of HxMoO3 nanobelts under an acidic condition using N2H4·H2O as the reducing agent. Three paper-form samples made from MoO3 and HxMoO3 nanobelts (low or high hydrogen content) were then fabricated via a vacuum filtration method, followed by their structural comparative analysis such as FESEM, XRD, Raman spectra, and XPS, etc. The measurement of electric resistances at room temperature shows that the conductance of HxMoO3 nanobelts is greatly improved because of hydrogen doping. The temperature-dependent resistances of HxMoO3 nanobelts agree with the exponential correlation, supporting that the conducting carriers are the quasi-free electrons released from Mo5+. In addition, the formation process of HxMoO3 nanobelts from MoO3 nanobelts is also discussed.
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