Vacancy Ordering in SmGe2-x and GdGe2-x (x = 0.33):  Structure and Properties of Two Sm3Ge5 Polymorphs and of Gd3Ge5

Paul H. Tobash, Daniel Lins, and Svilen Bobev*
Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716
Namjung Hur, Joe D. Thompson, and John L. Sarrao
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Inorg. Chem., 2006, 45 (18), pp 7286–7294
DOI: 10.1021/ic060913f
Publication Date (Web): July 28, 2006
Copyright © 2006 American Chemical Society
*

 Author to whom correspondence should be addressed. Phone:  (302) 831-8720. Fax:  (302) 831-6335. E-mail:  sbobev@chem.udel.edu.

Abstract

Abstract Image

The crystal structures and the magnetic properties of three new binary rare-earth intermetallic phases are reported. α-Sm3Ge5 and β-Sm3Ge5 and Gd3Ge5 have been prepared from the corresponding elements through high-temperature reactions using the flux-growth method. The structures of the three compounds have been established using single-crystal X-ray diffraction:  α-Sm3Ge5 crystallizes with its own type in the hexagonal space group P6̄2c (No. 190) with cell parameters a = 6.9238(11) Å, c = 8.491(3) Å, and Z = 2, whereas β-Sm3Ge5 adopts the face-centered orthorhombic Y3Ge5 type with space group Fdd2 (No. 43) and with cell parameters a = 5.8281(6) Å, b = 17.476(2) Å, c = 13.785(2) Å, and Z = 8. The orthorhombic Gd3Ge5 with cell parameters a = 5.784(2) Å, b = 17.355(6) Å, and c = 13.785(5) Å is isostructural with β-Sm3Ge5. The structures of the title compounds can be described as AlB2 and α-ThSi2 derivatives with long-range ordering of the germanium vacancies. Temperature-dependent DC magnetization (5−300 K) measurements show evidence of antiferromagnetic ordering below ca. 30 and 10 K for α-Sm3Ge5 and β-Sm3Ge5, respectively. Gd3Ge5 undergoes two successive magnetic transitions below ca. 15 and 11 K. The temperature dependence of the resistivity and heat capacity of Gd3Ge5 are discussed as well.

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History

  • Published In Issue September 04, 2006
  • Received May 25, 2006

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