J. Am. Chem. Soc., 126 (26), 8138 -8140, 2004. 10.1021/ja0476258 S0002-7863(04)07625-5
Web Release Date: June 15, 2004

Copyright © 2004 American Chemical Society

Perfluoropentacene: High-Performance p-n Junctions and Complementary Circuits with Pentacene

Youichi Sakamoto, Toshiyasu Suzuki,* Masafumi Kobayashi, Yuan Gao, Yasushi Fukai, Youji Inoue, Fumio Sato, and Shizuo Tokito

Institute for Molecular Science, Myodaiji, Okazaki 444-8787, Japan, New Products Development Division, Kanto Denka Kogyo Co., Ltd., 1-2-1 Marunouchi, Chiyoda-ku, Tokyo 100-0005, Japan, and NHK Science and Technical Research Laboratories, Kinuta, Setagaya-ku, Tokyo 157-8510, Japan

toshy@ims.ac.jp

Received April 24, 2004

Abstract:

We report the synthesis and characterization of perfluoropentacene as an n-type semiconductor for organic field-effect transistors (OFETs). Perfluoropentacene is a planar and crystalline material that adopts a herringbone structure as observed for pentacene. OFETs with perfluoropentacene were constructed using top-contact geometry, and an electron mobility of 0.11 cm2 V-1 s-1 was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably due to the similar d-spacings of both acenes. Complementary inverter circuits were fabricated, and the transfer characteristics exhibit a sharp inversion of the output signal with a high-voltage gain.

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