J. Am. Chem. Soc., 129 (37), 11354 -11355, 2007. 10.1021/ja074481z S0002-7863(07)04481-2
Web Release Date: August 28, 2007

Copyright © 2007 American Chemical Society

SnTe Nanocrystals: A New Example of Narrow-Gap Semiconductor Quantum Dots

Maksym V. Kovalenko,* Wolfgang Heiss, Elena V. Shevchenko, Jong-Soo Lee, Harald Schwinghammer, A. Paul Alivisatos, and Dmitri V. Talapin*

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, A-4040 Linz, Austria, and The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720

maksym.kovalenko@jku.at; dvtalapin@lbl.gov

Received June 19, 2007

Abstract:

A solution-phase synthesis of monodisperse SnTe nanocrystals via the reaction of bis[bis(trimethylsilyl)amino]tin(II) with trioctylphosphine telluride in oleylamine is demonstrated. The obtained SnTe nanocrystals are single-crystalline particles with a cubic rock-salt crystal structure. The size of the SnTe nanocrystals can be precisely tuned in the range of 4.5-15 nm by tailoring the reaction temperature and stabilizer concentration. These SnTe nanocrystals exhibit size-tunable band gap energies of 0.38-0.8 eV. The narrow size-distributions allow assembling SnTe nanocrystals into 3-dimensional superlattices.


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