Web Release Date: October 30,
Spectroscopic Properties of Colloidal Indium Phosphide Quantum Wires
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Contribution from the Department of Chemistry and Physics and Center for Materials Innovation, Washington University, St. Louis, Missouri 63130-4899, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907
Received June 4, 2007
Abstract:
Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photooxidation, without a significant influence on quantum-wire photoluminescence. However, photooxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.
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