Electrochemical Doping in Electrolyte-Gated Polymer Transistors

J. Am. Chem. Soc., 129 (46), 14367 -14371, 2007. 10.1021/ja0749845 S0002-7863(07)04984-0
Web Release Date: October 30, 2007

Electrochemical Doping in Electrolyte-Gated Polymer Transistors

Jonathan D. Yuen, Anoop S. Dhoot, Ebinazar B. Namdas, Nelson E. Coates, Martin Heeney, Iain McCulloch, Daniel Moses, and Alan J. Heeger*

Contribution from the Center for Polymers and Organic Solids, University of California, Santa Barbara, California 93106, Department of Materials, Queen Mary, University of London, Mile End Road, London, E1 4NS, United Kingdom, and Department of Chemistry, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom

ajhe@physics.ucsb.edu

Received July 5, 2007

Abstract:

By comparing the changes in -* absorption with the transconductance in PEO-LiClO₄ electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from d(T)/dT > 0 to d(T)/dT 0 as a function of the source-drain voltage. High current densities, up to 10⁶ A/cm² at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films.

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