Web Release Date: October 31,
DNA Sensing by Field-Effect Transistors Based on Networks of Carbon Nanotubes
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Contribution from the School of Materials Science and Engineering, Nanyang Technological University 50, Nanyang Avenue, Singapore, 639798, Department of Materials Science and Engineering, and Department of Chemistry, University of Illinois at Urbana-Champaign, Illinois 61801, and School of Physical and Mathematical Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
Received July 11, 2007
Abstract:
We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evidence for the notion that the energy level alignment between electrode and SWCNTs can be affected by DNA immobilization and hybridization. The study of location-selective capping using photoresist provides comprehensive evidence that the sensing of DNA is dominated by the change in metal-SWCNT junctions rather than the channel conductance.
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