Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

J. Am. Chem. Soc., 129 (51), 15732 -15733, 2007. 10.1021/ja074841i S0002-7863(07)04841-X
Web Release Date: November 29, 2007

Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

Hideaki Ebata, Takafumi Izawa, Eigo Miyazaki, Kazuo Takimiya,* Masaaki Ikeda, Hirokazu Kuwabara, and Tatsuto Yui

Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan, Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan, and Functional Chemicals R&D Laboratories Nippon Kayaku Co., Ltd., 3-31-12 Shimo, Kita-ku, Tokyo 115-8588, Japan

ktakimi@hiroshima-u.ac.jp

Received July 2, 2007

Abstract:

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO₂ substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm² V^-1 s^-1 and I_on/I_off of ~10⁷.

Download the full text: PDF | HTML