High Mobility Single-Crystal Field-Effect Transistors from Bisindoloquinoline Semiconductors

J. Am. Chem. Soc., 130 (4), 1118 -1119, 2008. 10.1021/ja077444g S0002-7863(07)07444-6
Web Release Date: January 3, 2008

High Mobility Single-Crystal Field-Effect Transistors from Bisindoloquinoline Semiconductors

Eilaf Ahmed, Alejandro L. Briseno, Younan Xia, and Samson A. Jenekhe*

Departments of Chemistry and Chemical Engineering, University of Washington, Seattle, Washington 98195-1750

jenekhe@u.washington.edu

Received September 26, 2007

Abstract:

A novel heptacyclic bisindoloquinoline-based organic semiconductor has been synthesized, characterized, and used to fabricate single-crystal field-effect transistors. A synthetic route was developed for the synthesis of heptacyclic bis(indolo{1,2-a})quinoline via an intramolecular cyclization of anthrazoline derivatives. Single-crystal X-ray structure revealed that the seven fused rings of bis(indolo{1,2-a})quinoline are relatively coplanar and lead to a slipped face-to-face -stacking with the shortest intermolecular spacing of 3.3 Å. Single-crystal field-effect transistors based on the bis(indolo{1,2-a})quinoline had carrier mobility as high as 1.0 cm²/V·s with on/off ratios greater than 10⁴.

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