Web Release Date: November 13,
Organophosphonate Self-Assembled Monolayers for Gate Dielectric Surface Modification of
Pentacene-Based Organic Thin-Film Transistors: A Comparative Study
and
Departments of Chemistry and Electrical Engineering, Princeton University, Princeton, New Jersey 08544, and Department of Physics, Dalhousie University, Halifax, Canada B3H 3J5
Received: July 3, 2007
In Final Form: August 16, 2007
Abstract:
Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series of phosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate, and (9-anthracene)phosphonate SAMs were examined. Significant improvements in the sub-threshold slope and threshold voltage were observed for each SAM treatment as compared to control devices fabricated without the buffer. These improvements were related to structural motif relationships between the pentacene semiconductor and the SAM constituents. Measured transistor properties were consistent with a reduction in density of charge trapping states at the semiconductor-dielectric interface that was effected by introduction of the self-assembled monolayer.
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