Web Release Date: August 26,
Metallic Single-Crystal CoSi Nanowires via Chemical Vapor Deposition of Single-Source Precursor
er,
and
Departments of Chemistry and Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, and Lehrstuhl Angewandte Physik-Sensorik, BTU Cottbus, 03046 Cottbus, Germany
Received: July 21, 2006
In Final Form: August 14, 2006
Abstract:
We report the synthesis, structural characterization, and electrical transport properties of free-standing single-crystal CoSi nanowires synthesized via a single-source precursor route. Nanowires with diameters of 10-150 nm and lengths of greater than 10 
m were synthesized through the chemical vapor deposition of
Co(SiCl3)(CO)4 onto silicon substrates that were covered with 1-2 nm thick SiO2. Transmission electron
microscopy confirms the single-crystal structure of the cubic CoSi. X-ray absorption and emission spectroscopy
confirm the chemical identity and show the expected metallic nature of CoSi, which is further verified by
room-temperature and low-temperature electrical transport measurements of nanowire devices. The average
resistivity of CoSi nanowires is found to be about 510 
cm. Our general and rational nanowire synthesis
approach will lead to a broad class of silicide nanowires, including those metallic materials that serve as
high-quality building blocks for nanoelectronics and magnetic semiconducting Fe1-xCoxSi suitable for silicon-based spintronics.
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