Web Release Date: March 14,
Study of a Family of 40 Hydroxylated
-Cristobalite Surfaces Using Empirical Potential
Energy Functions



and

104 Chemistry Building, Department of Chemistry, Department of Geosciences and The Earth and Environmental Systems Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Received: November 27, 2006
In Final Form: January 31, 2007
Abstract:
We present a study of a family of 40 unique hydroxylated
-cristobalite surfaces generated by cleaving the
-cristobalite unit cell along crystallographic planes to include a combination of several low Miller index
surfaces. The surface silicon atoms are quantified as percentages of Q2 and Q3 centers based on their polymeric
state. We find that Q3 centers are, on average, three times more abundant than Q2 centers. To study the
surface properties, we use two different empirical potential energy functions: the multibody potential proposed
by Fueston and Garofalini (J. Phys. Chem. 1990, 94, 5351) and the newly developed CHARMM potential by
Lopes et al. (J. Phys. Chem. B 2006, 110, 2782). Our results for the surface water interactions are in good
agreement with previous ab initio theoretical studies by Yang et al. (Phys. Rev. B 2006, 73, 146102) for the
(100) surface. We find that the most commonly studied family of {100} surfaces is unique and is the only
surface with 100% abundance of Q2 centers, whereas there are nine examples of surfaces with 100% Q3
centers. The predominantly pure Q3 surfaces show no hydrogen bonding with the neighboring surface hydroxyl
groups and weakly adsorb water overlayers. This is markedly different from the {100} pure Q2 surface that
shows strong hydrogen bonding within the surface groups and with water. As compared to all the surfaces
studied in this work, we find that the {100} surfaces are not true representations of the overall
-cristobalite
surfaces and their properties. We find that the two main factors that characterize the physical properties of
silica surfaces are the polymeric state of the silicon atom and surface topography. Two types of pure Q3
crystallographic planes have been identified and are labeled as Q3A and Q3B based on the differences in their
topological features. Using the {111} and {011} surfaces as examples, we show that the Q3A surface adsorbs
H2O that forms a stable monolayer, but the Q3B surface fails to form a stable H2O overlayer. Other
crystallographic planes with different ratios of Q2 to Q3 centers are contrasted by the differences in the hydrogen-bonding network and their ability to form ordered H2O overlayers.
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