J. Phys. Chem. C, 111 (45), 16840 -16845, 2007. 10.1021/jp074731y S1932-7447(07)04731-0
Web Release Date: October 16, 2007

Copyright © 2007 American Chemical Society

Geometric and Electronic Structures of Hydrogen-Stabilized Silicon Nitride Nanosheets and Nanotubes

Tao He, Mingwen Zhao,* Weifeng Li, Chen Song, Xiaohang Lin, Xiangdong Liu, Yueyuan Xia, and Liangmo Mei

School of Physics and Microelectronics, Shandong University, Jinan 250100, China

Received: June 18, 2007

In Final Form: August 16, 2007

Abstract:

The geometric and electronic structures of hydrogen-stabilized silicon nitride (H-SiN) nanosheets and nanotubes with the stoichiometry of HSiN were studied using first-principles calculations within density functional theory. The predicted H-SiN nanosheets present two-dimensional hexagonal characters, while the H-SiN nanotubes are built from rolling up the nanosheet, analogous to the cases of graphene and carbon nanotubes. The stable configurations of the H-SiN nanosheets and nanotubes considered in this work have different hydrogenation modes and surface structures. Their electronic properties are also addressed by performing band-structure calculations and Mulliken population analysis. This work is expected to provide vital information to the future synthesis and utilization of these materials in nanoscience and nanotechnology.


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