Web Release Date: November 1,
The Relation between the Electrical, Chemical, and Morphological Properties of Indium-Tin Oxide Layers and Double-Layer Light-Emitting Diode Performance
and
ENEA Research Center Portici, via Vecchio Macello, 80055 Portici (NA), Italy, and Department of Information and Electrical Engineering, University of Salerno, via Ponte Don Melillo, 84084 Fisciano (SA), Italy
Received: June 8, 2007
Abstract:
The relation between the electrical, chemical, and morphological properties of indium-tin oxide (ITO) thin films and organic light-emitting diode (OLED) performance is studied. We report on chemical (HCl, piranha solutions), thermal (vacuum annealing), physical (oxygen plasma, UV ozone), and combined treatments on ITO layers. The effects of these different treatments have been studied using the four-point probe resistivity measurement method, contact angle measurement, X-ray diffraction, surface profilometry, and UV-vis-IR transmittance. Double-layer OLEDs with treated ITO as the anode and poly(9,9-dihexyl-9H-fluorene-2,7-diyl) and 8-hydroxyquinoline aluminum salt as the hole transporter and emitting material, respectively, have been realized. The electrical and optical properties of OLEDs have been extensively investigated, and it is shown that UV ozone-HCl combined treatment yields the highest hole injection efficiency and luminance and the lowest drive voltage. For each OLED with treated ITO, the anode potential barrier height decrease is estimated using Fowler-Nordheim and Schottky-Richardson modeling of the electrical conduction.
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