Web Release Date: November 20,
Electrochemical Fabrication of a Memory Device Based on Conducting Polymer Nanocomposites
Department of Chemistry and Key Laboratory of Bio-organic Phosphorus Chemistry and Chemical Biology, Tsinghua University, Beijing 100084, People's Republic of China
Received: July 28, 2007
In Final Form: October 3, 2007
Abstract:
Memory devices with sandwiched structures were fabricated by electrochemical deposition of the active layers onto indium tin oxide substrates. The active layers with thicknesses of 240-280 nm were composed of poly(3-hexylthiohene) and gold nanoparticles (GNPs), in which the GNP content was around 9 wt %. The devices exhibited an on/off conductivity ratio of 103 and can be read for over 104 times without a distinct performance decrease even after being stored in air without packing for over 1 month.
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