Web Release Date: January 5,
Interfacial Electronic Properties of Thiophene and Sexithiophene Adsorbed on a Fluorinated Alkanethiol Monolayer
Department of Chemistry and Center for Advanced Materials, The University of Massachusetts Lowell, Lowell, Massachusetts 01854
Received: July 10, 2007
In Final Form: September 17, 2007
Abstract:
X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) have been used to study the interfacial
electronic properties of thiophene and
-sexithiophene (6T) adsorbed at 130 K in ultrahigh vacuum on top
of 1H,1H,2H,2H-perfluorodecanethiol (PFDT) self-assembled monolayers (SAMs) on gold. The binding energy
of the F 1s XPS peak decreases following thiophene and 6T adsorption, indicating charge transfer to the
fluorinated SAMs. UPS measurements substantiate charge transfer, with the valence features of thiophene
and 6T in contact with the monolayer appearing at higher ionization energies compared to thicker layers. The
energies of the UPS-measured vacuum levels of 6T deposited on PFDT/Au illustrate the absence of a common
vacuum level between the organic layers at the PFDT-6T interface and the presence of a -0.9 eV interface
dipole. Similar measurements performed for 6T deposition on self-assembled octadecanethiol (ODT) give a
weaker interface dipole of opposite sign (
= +0.4 eV). The relatively large value and sign of the 6T/PFDT/Au interface dipole suggest that charge transfer to the PFDT-covered surface results in the formation
of dipoles with their negative ends toward the Au surface, in contrast to the 6T-ODT interface. The effects
of a SAM layer on X-ray-induced oligomerization, which is known to occur for condensed thiophene, were
also investigated. Comparison of the thickness of oligomeric thiophene formed by Mg K
X-ray irradiation
on clean and PFDT-covered gold surfaces demonstrates that a thicker oligomer layer forms on the SAM-covered surface, suggesting that the spacing provided by the SAM reduces quenching of electronic excitations
that lead to X-ray-induced oligomerization.
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