Web Release Date: January 9,
Multiple ZnO Nanowires Field-Effect Transistors
Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
Received: October 3, 2007
In Final Form: November 3, 2007
Abstract:
We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assembling
as-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC)
dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with a
bias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50~65
nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3~11.5 
S
at a drain voltage of 1~5 V, a mobility of ~30 cm2/V·s, and a carrier concentration of 9.4 × 1017 cm-3. For
a comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithography
with a back-gate structure.
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