Web Release Date: February 6,
Selective Growth of Straight and Zigzagged Ga1-xMnxN (0 
x 0.05) Nanowires and
Dependence of Their Electronic Structure and Magnetization on the Mn Content
Department of Chemistry, Korea University, Jochiwon 339-700, Korea
Chemical R&D Center, Samsung Cheil Industry Inc., Uiwang 332-2, Korea
Department of Chemistry, KAIST, Daejeon 305-701, Korea
Department of Chemistry, Kyungpook National University, Taegu 702-760, Korea
Received: November 7, 2007
In Final Form: December 6, 2007
Abstract:
Straight and zigzagged Ga1-xMnxN (0 x 0.05) nanowires were selectively synthesized by the vapor
transport method, using different growth temperature. They consisted of single-crystalline wurtzite GaN
nanocrystals grown along the [10
0] and [0001] directions for the straight and zigzagged morphologies,
respectively. The lattice constant, c, decreases initially with increasing amount of Mn doping (x), and then
increases as x increases above 0.03. X-ray photoelectron spectroscopy revealed that as the Mn content increases
to x = 0.02, the binding energy of Ga 2p shifts to a higher energy, suggesting the possibility of hybridization
between the Mn2+ ions and host defects. X-ray absorption spectroscopy and X-ray magnetic circular dichroism
confirmed that the Mn2+ ions substitute into the tetrahedrally coordinated sites. The magnetization measurement
revealed that all of these nanowires exhibited room-temperature ferromagnetic behaviors, most significantly
for the straight nanowires grown with the [100] direction, having x = 0.02-0.03.
Download the full text: PDF | HTML
