Nano Letters, 4 (5), 911 -914, 2004. 10.1021/nl0496522 S1530-6984(04)09652-3
Web Release Date: April 23, 2004

Copyright © 2004 American Chemical Society

Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

K. Lee, Z. Wu, Z. Chen, F. Ren, S. J. Pearton, and A. G. Rinzler*

Department of Materials Science and Engineering, Department of Physics, and Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

Received March 3, 2004

Revised March 26, 2004

Abstract:

Homogeneous films of pure single wall carbon nanotubes (SWNTs) sufficiently thin to be optically transparent in the visible range of the spectrum were employed as p-Ohmic contacts on GaN-InGaN quantum-well light-emitting diodes. The specific contact resistance of the SWNT films on the p-GaN was 1.1 × 10-2 cm2 after annealing at 700 C for 60 s under N2, which was a factor of 3 lower than standard Ni/Au contacts on the same p-GaN. The SWNT-contacted LEDs showed bright blue emission centered at 434 nm and demonstrate that the SWNT films provide a new class of electrically conducting, p-type, transparent electrode for use with photonic devices.

Download the full text: PDF | HTML