Web Release Date: November 25,
Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors
National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, Maryland 20899
Received September 16, 2005
Revised October 26, 2005
Abstract:
Dual-gated silicon nanowire (SiNW) field-effect transistors (FETs) have been fabricated by using electron-beam lithography. SiNW devices (W
60 nm) exhibit an on/off current ratio greater than 106, which is more than 3 orders of magnitude higher than that of control devices
prepared simultaneously having a large channel width (~5 
m). In addition, by changing the local energy-band profile of the SiNW channel,
the top gate is found to suppress ambipolar conduction effectively, which is one of the factors limiting the use of nanotube or nanowire FETs
for complimentary logic applications. Two-dimensional numerical simulations show that the gate-induced electrostatic control is improved as
the channel width of the FETs decreases. Therefore, enhanced channel modulations can be achieved in these dual-gated SiNW devices.
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