Web Release Date: February 4,
Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography
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Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, and Advanced Materials & Processes Labs, Technology Development Operations, Hewlett-Packard Company, 1000 Circle Boulevard, Corvallis, Oregon 97330
Received October 26, 2005
Revised January 6, 2006
Abstract:
High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm2 was fabricated by two consecutive imprinting processes.
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