Web Release Date: June 29,
Effect of Diameter Variation in a Large Set of Carbon Nanotube Transistors
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720
Received February 9, 2006
Revised April 27, 2006
Abstract:
A study involving a large number of carbon nanotube transistors reveals that the nanotube diameter and the metal contact material play key roles in determining the on- and off-state currents of these devices. The results are discussed in terms of the Schottky barrier at the metal-semiconductor junction and the variation of this barrier relative to the alignment of energy levels between the carbon nanotube and the metal.
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