Nano Lett., 7 (11), 3405 -3409, 2007. 10.1021/nl071792z S1530-6984(07)01792-4
Web Release Date: October 3, 2007

Copyright © 2007 American Chemical Society

Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors

Eric Stern, Robin Wagner, Fred J. Sigworth, Ronald Breaker, Tarek M. Fahmy,* and Mark A. Reed*

Departments of Biomedical Engineering, Electrical Engineering, Molecular, Cellular, and Developmental Biology and Howard Hughes Medical Institute, Applied Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520

Received July 23, 2007

Revised September 10, 2007

Abstract:

Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the solution Debye length is critical for unambiguous selective detection of macromolecules. Here we show the appropriate conditions under which the selective binding of macromolecules is accurately sensed with NW-FET sensors.


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