Web Release Date: November 10,
Optical and Electrical Performance of SnO2 Capped ZnO Nanowire Arrays
and
Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong Kong, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Received April 4, 2007
Revised June 7, 2007
Abstract:
Two-junction-nanowire arrays (SnO2 capped ZnO nanowire arrays on Zn substrate) are synthesized using a two-step-solution-reaction. The bare single crystalline ZnO nanowires give reasonably intense band edge luminescence but also strong green emission likely due to surface defects. The SnO2 capping treatment not only introduces caps on the tip of the ZnO nanowires but also partially passivates the nanowire surfaces, leading to improved near band edge emission and the suppression of the defect luminescence. The nanowire array configuration allows a straight forward electrical measurement on the single nanowire junction (Zn-ZnO-SnO2). The I-V results indicate that a little barrier exists in between the Zn substrate and the nanowire. The observation of more complicated electrical behaviors of the two-junction system (Zn/ZnO/SnO2) discloses the nonuniform doping of the SnO2 cap, which is consistent with the EDX compositional analysis.
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