Web Release Date: November 15,
Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits
and
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices and College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Received July 15, 2007
Revised September 15, 2007
Abstract:
We have fabricated ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) by contacting semiconducting single wall
CNTs using Sc. Together with the demonstrated ballistic p-type CNT FETs using Pd contacts, our work closes the gap for doping-free fabrication
of CNT-based ballistic complementary metal-oxide semiconductor (CMOS) devices and circuits. We demonstrated the feasibility of this doping-free CMOS technology by fabricating a simple CMOS inverter on a SiO2/Si substrate using the back-gate geometry, but in principle much more
complicated CMOS circuits may be integrated on a CNT on any suitable insulator substrate using the top-gate geometry and high-
dielectrics.
This CNT-based CMOS technology only requires the patterning of arrays of parallel semiconducting CNTs with moderately narrow diameter
range, for example, 1.6-2.4 nm, which is within the reach of current nanotechnology. This may lead to the integration of CNT-based CMOS
devices with increasing complexity and possibly find its way into the computers brain: the logic circuit.
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