Nano Lett., 7 (12), 3608 -3611, 2007. 10.1021/nl0717917 S1530-6984(07)01791-2
Web Release Date: November 16, 2007

Copyright © 2007 American Chemical Society

Graphene Nanostrip Digital Memory Device

Daniel Gunlycke,* Denis A. Areshkin, Junwen Li, John W. Mintmire, and Carter T. White*

Naval Research Laboratory, Washington, District of Columbia 20375, George Washington University, Washington, District of Columbia 20052, and Oklahoma State University, Stillwater, Oklahoma 74078

Received July 23, 2007

Revised September 18, 2007

Abstract:

In equilibrium, graphene nanostrips, with hydrogens sp2-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.


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