Web Release Date: November 17,
Control and Detection of Organosilane Polarization on Nanowire Field-Effect Transistors
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Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, Institute of Physics, Academia Sinica, Nankang 11529, Taipei, Taiwan, Department of Molecular Science and Engineering, National Taipei University of Technology, Taipei 70608, Taiwan, Department of Material Science, National University of Tainan, Tainan 70005, Taiwan, Department of Physics, National Chang-Hua University of Education, Chang-Hua 500, Taiwan, Institute of Oral Medicine and Institute of Molecular Medicine, National Cheng-Kung University, Tainan 701, Taiwan, Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan, and Department of Electrical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Received August 3, 2007
Revised October 9, 2007
Abstract:
We demonstrated control and detection of UV-induced 3-aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.
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