APS » PROLA » Phys. Rev. B » Volume 58 » Issue 24

Phys. Rev. B 58, R16024 - R16026 (1998)

Nucleation and growth of Si nanowires from silicon oxide

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N. Wang, Y. H. Tang, Y. F. Zhang, C. S. Lee, and S. T. Lee *
Center of Super-Diamond and Advanced Films, Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong, China

Rapid Communication Received 18 August 1998; revised 28 September 1998

Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles (the nuclei of nanowires). Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high density of defects and a Si oxide shell. A growth mechanism was proposed based on the microstructure and different morphologies of the Si nanowires observed.


©1998 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v58/pR16024
DOI: 10.1103/PhysRevB.58.R16024
PACS: 81.05.Ys, 61.16.Bg, 71.20.Mq, 81.10.-h

* Author to whom correspondence should be addressed. Electronic address: APANNALE@cityu.edu.hk

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