
Web Release Date: December 4,
Preparation and Tribological Behaviors of an Amide-Containing Stratified Self-Assembled Monolayers on Silicon Surface




and
State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000, China and Graduate University of Chinese Academy of Sciences, Beijing 100080, China
Received June 9, 2007
In Final Form: August 30, 2007
Abstract:
An amide-containing stratified self-assembled film is grafted on a silicon surface by a simple two-step method.
First, N-[3-(trimethoxylsilyl)propyl]ethylenediamine (DA) molecules are self-assembled on silicon surfaces followed
by deriving with stearoyl chloride (STC) through a surface coupling reaction. The films are characterized by means
of contact angle measurement, ellipsometry, and attenuated total reflectance Fourier transformed infrared (ATR-FTIR)
spectra. STC forms an ordered and hydrophobic film over the DA layer with a water contact angle of nearly 110
.
A microtribological study of the films is carried out on an atomic force microscope (AFM), and the wear-resistant
property is tested on a ball-on-plate tribometer. Compared to the films in our previous study, the friction-reducing
and load-affording abilities of the film are greatly improved. We contribute the improvements to the existence of two
layers of hydrogen bonds, which can enhance the stability of the film by double in-plane cross-linking.
Self-assembled monolayers (SAMs) have generated substantial interest recently.1 The preparation procedure of such thin organic thin films is simple. More importantly, it is possible to control the physical and chemical properties and desired chemical functionality with a unique molecular architecture.2
SAMs have found many applications in many areas to date.
One of the applications is as a friction reducing and anti-stiction
layer in micro-electromechanical systems (MEMS), which has
been extensively studied recently.3-7
Besides, intermolecular interaction within SAMs can also play
an important role. Introducing functional groups, such as
diacetylene,9 peptide,10-12
-stacking, or covalent attachment, which in turn
enhance the mechanical integrity and stability.
Generally, there are two approaches to obtain these more
complex structures on surfaces. One is to synthesize target
precursors with functional group(s) and then assemble them onto
surfaces by a one-step method,14-18
Several reports14-16 have demonstrated that incorporation of
amides into hydrocarbon backbones of precursors could improve
the stability of the SAMs. The likely reason was that the amide
underlayers were capable of being cross-linked by hydrogen
bonding. In our previous reports12,18 we built amide-containing
SAMs on silicon surfaces and found very excellent wear-resistant
properties of the films. In these works, one amide group was
introduced, so only one layer of interlinked hydrogen bond was
formed. Hutchison et al.15-17,20
In our previous study,12 we self-assembled 3-aminopropyltriethoxylsiliane (APS) onto silicon and then modified the amino-terminated with stearic acid (STA) to form an amide-containing
film. The amide-containing film has a less densely packed
structure with a water contact angle of only 98
. Thus, it is not
effective enough for its anti-stiction use in MEMS. In the present
study, we choose N-[3-(trimethoxylsilyl)propyl]ethylenediamine
(DA) and stearoyl chloride (STC) instead of APS and STA. The
reasons are follows: first, DA with a longer chain length than
APS tends to form a more densely packed and well-ordered film;
second, STC is more reactive than STA for the surface coupling
reaction with the NH2 group; last, the two -NH- groups
contained in the DA chain can provide opportunities to form
two-layer networks of hydrogen bonds, which will greatly enhance
the stability of the SAMs by cooperative interactions.20 The
ideal structure of the amide-containing stratified film is shown
in Figure 1.
| Figure 1 Schematic view of the amide-containing stratified film on silicon. |
Materials. N-[3-(Trimethoxylsilyl)propyl]ethylenediamine (DA)
and 3-aminopropyl-triethoxylsilane (APTES) were purchased from
Aldrich. Stearic chloride was purchased from Fluka. Acetone, toluene,
and triethylamine were all analytical reagent. All reagents were
used as received. The P-type polished single-crystal Si(111) wafer
used as the substrate was obtained from GRINM Semiconductor
Materials Co., Beijing, China. Ultrapure water (>18 M
) was used
in this work.
Preparation of Films on Silicon Wafer. Silicon wafers were
cleaned and hydroxylated in Piranha solution (mixture of 7:3 (v/v)
98% H2SO4 and 30% H2O2) at 90
C for 30 min. After that they were
rinsed copiously by deionized water.
A 20
L amount of DA was dissolved in 20 mL of a mixture of
acetone and water. The ratio of acetone and water was 10:1 (by
volume). Cleaned wafers were immersed in fresh DA solutions.
After a certain period of time, the wafers were removed from the
solutions and sonicated for 5 min in acetone and cyclohexane.
After being ultrasonically cleaned in cyclohexane, the above-treated wafers were immersed in a 10 mM cyclohexane solution of
lauroyl chloride with 5
L of triethylamine for 24 h, then ultrasonically
cleaned in toluene and acetone, in succession, and rinsed by deionized
water and blown dry with nitrogen.
Besides, APTES film was also prepared according to the procedures mentioned in our previous report12 and then modified by STC. The film is coded as APSC18 film.
Contact Angle Measurement. A CA-A type contact angle meter
(Kyowa Scientific Co. Ltd.) was used to measure the static water
contact angle of the films. At least three points were measured for
each specimen, and the measurement error was ±1
. For each drop
on the surfaces, both sides were measured to get the averages.
Film Thickness Measurement. The ellipsometric thickness
measurements were performed on a L116-E ellipsometer (Gaertner,
USA), which was equipped with a He-Ne laser (632.8 nm) set at
an incident angle of 50
. A real refractive index of 1.46 was set for
the silica layer and 1.45 for organic layers. The data were collected
from 10 different positions for each specimen to get the averages.
Attenuated Total Reflectance Fourier Transform Infrared
(ATR-FTIR) Spectra. ATR-FTIR spectra were recorded on a Bruker
IFS 66 V/S Fourier transformation infrared spectrometer. The spectra
of the films were obtained using a Harrick Scientific horizontal
reflection Ge-attenuated total reflection accessory (GATR, 65
incidence angle). The samples were placed in contact with the flat
surface of a semispherical Ge crystal, which serves as the optical
element. The spectra were collected for 32 scans with a resolution
of 4 cm-1. The background was collected using the accessory with
no sample placed on it. In order to eliminate the effect of H2O and
CO2, the pressure in the sample chamber and optical chamber was
kept below 6.0 × 10-4 MPa.
Atomic Force Microscopy. A Nanoscope IIIa Multimode atomic
force microscope (AFM, Digital Instruments) was employed to
observe the film morphology using tapping mode. The relationship
between normal load and friction force was measured on a SPA
300HV scanning probe microscope (SII NanoTechnology Inc.,
Japan). Normal loads were applied on by varying force references
in the units of nanoNewtons (nN). Friction forces were obtained
from friction loops at five separate points on each surface with a
scan velocity of 5
m/s. The output voltages were directly used as
frictional forces. The triangle-shaped silicon nitridecantilevers with
an announced spring constant of 2N/m were used. No attempt was
made to calibrate the torsional force constant. For all measurements,
the same cantilever was used. Experiments were carried out under
ambient conditions of 20
C and 30%-40% relative humidity.
Macrotribology. Macrotribological properties were studied on
a UMT-2MT tribometer (CETR, USA) using a ball-on-plate mode.
The upper ball counterpart was fixed, while the lower sample plate
was adhered on the flat base which reciprocated at a distance of 0.7
cm. The balls used here were commercially available ruby balls
(Al2O3,
4 mm). Loads of 10, 30, and 50 g (corresponding to 0.1,
0.3, and 0.5 N, respectively) were applied. The friction coefficient-time plots were recorded automatically, and at least three repeated
measurements were performed.
Formation of Amide-Containing Stratified SAMs via a Two-Step Method. The amide-containing stratified films were formed on silicon surfaces by a two-step method. DA SAMs with NH2 groups exposed outside served as adhesive layers. STC molecules were chemically absorbed on NH2 groups of DA to form a hydrophobic overlayer. For convenience, the film derived from DA with STC is coded as DAC18 film. 3-Aminopropyltriethoxylsilane (APTES) or 3-aminopropyltrimethoxylsilane (APTMS) is frequently used to fabricate amino-terminated surfaces for various applications. While these APTES or APTMS films are usually disordered and multilayered. With one more -CH2CH2NH- units, DA tends to form more densely packed and more ordered SAMs. Additionally, hydrogen bonding between adjacent molecules may occur in the buried -NH- layer(s), which will enhance the rigidities and stabilities of the aminosilane SAMs.
Formation of DA SAMs was monitored by water contact angle
measurement and ellipsometric thickness measurement during
the preparation process. We assumed that one CH2 unit
(considering one NH or NH2 equal to one CH2) is 0.14 nm in
length in the all-trans configuration chains,22 so a complete DA
SAM has a theoretical thickness of about 1.00 nm. Every 10 or
20 min two specimens of each kind were picked out of the
solutions, cleaned, and blown dry and then used for the thickness
measurements. The measured thickness increased slowly with
time; we immediately released all of them out of the solutions
when the measured thickness reached the corresponding theoretical value. If the reaction time was prolonged, the thickness
would be more than the theoretical values, indicating a multilayer
was formed. Because the formation process was so sensitive to
solvent, concentration, temperature, and water content, the time
to form a completed monolayer slightly varied every time. The
thickness of the SiO2 layer on silicon wafer is about 1.7 nm after
the cleaning process; the thickness of the DA film is 0.98 nm,
which is close to the theoretical value b (Figure 2). Water contact
angles changed little with the increase of thickness. At the early
stage the contact angles already reached around 40
. At the end,
the contact angle remained at 39
on average, as shown in Figure
2. For amino-terminated SAMs, a wide range of contact angles
have been reported23 and high contact angles indicate disordered
structures for the exposure of alkyl chains.24 We obtained a contact
angle of 44
on APTES SAMs surface.12 Thus, DA formed more
densely packed SAMs than APTES with many more polar NH2
groups exposed outside.
| Figure 2 Water contact angles and ellipsometric thicknesses of the various films. |
In the second step, STC was used to modify the amine surfaces.
Figure 2 shows the sharp increase in film thickness and water
contact angles after modification, causing the water contact angle
to reach 109
and film thickness to increase about 2.4 nm. The
theoretical thickness of a fully covered STC layer is about 2.6
nm; a complete SAMs with an 18-carbon chain has a water
contact angle more than 110
.22,25 Therefore, nearly full coverage
was obtained on the amino surface, which is a great improvement
over APTES in our previous study.12 The density of self-assembled molecules on top of the aminosilanized layer was
determined by the surface density of the amine group. Thus, DA
formed a dense film with larger -NH2 density on the surface.
With the same amino tail, longer chain aminosilanes can form
a more dense film. APTES, with a shorter chain, self-assembles
onto the silicon surface randomly to form a film with fewer
amine groups on top. Smirnov et al.26 also found a higher
adsorption ability of DA than APS for coumarin molecules in
their recent study.
The FTIR spectra of the films on silicon wafers are shown in Figure 3. For DA film (Figure 3a), only the asymmetric and symmetric methylene vibrations are observed at 2928 and 2855 cm-1, respectively. Upon addition of STC (Figure 3b), the vibrational signatures of methylene shifted to 2923 and 2855 cm-1, respectively. The intensity of both increases obviously, indicating the increase of crystallinity of the methylene chains. Even then, methylene chains are not so closely packed.27 The key bands at 1639 and 1542 cm-1 can be assigned to amide I (predominantly C=O stretching) and amide II (involving torsional motions of both N-H and C-N) due to formation of a -NHC=O group, which is in good agreement with the literature.10,14,28 Hydrogen bonding may cause a decrease in electron density of the C=O bond and increasing restriction in N-H bending. Whitesides et al. claimed the existence of hydrogen bonding in the SAMs based on FTIR results that the amide I band is at 1650 cm-1 and amide II at 1550 cm-1.14 Thus, the existence of hydrogen bonding can be indicated by the red shift of the amide I band and blue shift of the amide II band. Therefore, it is reasonable to conclude that hydrogen bonding exists in our DAC18 film.
| Figure 3 Ge attenuated total reflective FTIR spectra of DA film (a) and DAC18 film (b) on silicon. |
In order to obtain information on the surface characteristics, such as the uniformity, roughness, grain distributions, and defect formation, we observed the surface morphology of the prepared films using AFM.29 The morphologies of DA and DAC18 films are shown in Figure 4. It can be seen that both surfaces are characterized by regular grains distributed on the surface. Nevertheless, the surfaces of the films are still rather smooth on the micrometer scale: DA film has a microroughness of root-mean-square (rms) about 0.15 ± 0.01 and 0.20 ± 0.02 nm for DAC18 film over a scanning range of 500 nm × 500 nm. The slight increase in microroughness after addition of STC may be caused by incomplete coverage of STC on DA surface. This is consistent with contact angle and FTIR measurements.
| Figure 4 AFM morphologies of DA film (a) and DAC18 film (b) over a scan area of 500 nm × 500 nm. The Z range data scale is 2 nm. |
MicroTribological Study. Friction force measurements were
performed in air using an FFM. Here, the friction force is given
in voltage. The voltage signal should be proportional to the real
friction force.27 Therefore, the friction forces on various film
surfaces can be compared with one another when the same AFM
tip is used. Figure 5a shows linear relationships between the
lateral deflection and load for the different surfaces. The linearity
of the friction load relationship suggests that generalized
Amonton's Law can be applied in which the lateral force (FL)
is given by

is the coefficient of friction, FN is the normal load, and
F0 is the friction force when the external load is zero.7,30 The
slope of the friction versus load curve can be used as the relative
friction coefficient since it is supposed to be proportional to the
real friction coefficient.7,21 The relative friction coefficients of
the films are summarized in Figure 5b. As seen, with no organic
film on, bare silicon surface generates the highest friction. This
may be contributed to the highest surface energy on the SiO2-covered surface. The highest surface energy can be indicated by
the lowest water contact angle. The friction coefficient is reduced
by formation of organic film on silicon. The friction of the amino-terminated film is largely reduced after being coupled with STC.
The decrease of the frictional coefficient is mainly due to
replacement of more polarized NH2 groups by nonpolarized CH3
groups on the surface. SAMs with more polarized groups generally
possess higher surface energy and relatively strong interaction
during the sliding; therefore, higher adhesion and more energy
loss are expected, which leads to a higher friction force and
friction coefficient. On the other hand, the flexibility of the STC
overlayer can also greatly reduce the friction force.
Macrotribological Study. The wear-resistance ability of SAMs is very important for their potential use as a lubricant layer. The wear-resistance property of the films mentioned above was tested on a ball-on-plate macrotribometer. Poor wear resistance has been found for DA film (Figure 6a). It was worn out as soon as the counterpart ball began to slide on it. The antiwear ability of DA film was enhanced greatly after being modified by STC (Figure 6b,c). Film DAC18 can remain as an effective lubricant layer for more than 18 000 s at a load of 0.1 N and a sliding rate of 60 rev/min. The average friction coefficient is about 0.08 and remains below 0.1 over a period of 5 h as the load increased to 0.3 N (Figure 6c). However, when a load of 0.5 N was applied, the film was worn out after several seconds, as witnessed by the sudden increase of the friction coefficients (Figure 6d). In our previous study,12 we prepared films using APTES and STA and found very excellent anti-wear-resistant properties on them. However, these were tested on a different tribometer and at a lower sliding velocity (90 mm/min). Using similar procedures, we prepared films with the same structure, e.g., APSC18 film. Then the same testing conditions and counterpart ball for DAC18 were used to test APSC18 films. We found that APSC18 film was stable under a load of 0.1 N at a sliding frequency of 1 Hz (equal to a sliding velocity of 840 mm/min) but was easily destroyed under a load of 0.2 N (Figure 7). Besides, the friction coefficient of APSC18 film is higher and grows more rapidly. The enhanced friction reduction and load affording ability of DAC18 film should rely on its intrinsic structure. The densely packed and rigid underlayer of DA enhanced the stability and load carrying capacity of the entire film. STC with a long and flexible chain forms an ordered and a hydrophobic overlayer from which low friction and long life were obtained. A network of lateral cross-links within the film was formed due to two layers of internal hydrogen bonds, which largely improve the stability of the DAC18 film. From the above we can find ways to design films with good frictional performances. Both a rigid part to withstand load and a hydrophobic and flexible part to reduce surface adhesion and friction force should be contained in the structure.
| Figure 7 Variation in friction coefficient with time for APSC18 film at different applied loads and sliding frequency of 1 Hz: (a) 0.1 N and (b) 0.2 N. |
Additionally, we found that frictional coefficient could be affected by sliding speed. The average coefficients for the DAC18 film during the first 5 min for each sliding frequency were collected. As shown in Figure 8, the friction coefficients increase with the increase of sliding velocity. We contribute this phenomenon to the higher degree of oscillation and distortion of the molecules at higher shear velocity, which accelerates dissipation of the accumulated energy.31
| Figure 8 Variation in friction coefficient with sliding velocity for DAC18 film at a normal load of 0.1 N. |
An amide-containing stratified thin film was formed on a silicon
surface by a simple two-step method. DA was first assembled
on the substrates to get a rigid and dense underlayer, and STC
was grafted onto it to achieve a hydrophobic surface with a water
contact angle of nearly 110
. We confirmed the structure by
GATR FTIR spectra and concluded the existence of hydrogen
bonding in the film. A tribological study performed on AFM
showed that the friction force was reduced by formation of DAC18
film. Better friction reducing and anti-wear performances of the
DAC18 film than APSC18 film were also confirmed from the
results of the macrotribology test. We contribute these improvements to the two layers of internal hydrogen bonds within the
film. The resulting network of lateral cross-links by internal
hydrogen bonds can enhance both the load affording ability and
the stability of the film. Thus, it is an efficient way to design a
reliable lubricating layer applied in microelectromechanical
systems on the molecular level.
The authors thank the Natural Science Foundation of China (grant nos. 50572107 and 20673131) and "Hundreds Talent Program" of the Chinese Academy of Sciences for financial support. We also thank Professor Xin Shao (College of Material Science and Engineering of Liaocheng University) for assistance in the use of the AFM facility.
* To whom correspondence should be addressed. Phone: 86-931-4968088. Fax: 86-931-8277088. E-mail: sryang@lzb.ac.cn; zhangjunyan@lzb.ac.cn.
Lanzhou Institute of Chemical Physics, Chinese Academy of Science.
Graduate School of Chinese Academy of Science.
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