
Web Release Date: November 1,
Multiexciton Generation by a Single Photon in Nanocrystals
Center for Computational Material Science, Naval Research Laboratory, Washington, D.C. 20375, School of Computational Sciences, George Mason University, Fairfax, Virginia 22030, and Center for Basic Sciences, National Renewable Energy Laboratory, Golden, Colorado 80401
Received August 31, 2006
Revised October 17, 2006
Abstract:
We have theoretically shown that efficient generation of multi-electron-hole pairs by a single photon observed recently in semiconductor
nanocrystals1-4
Solar irradiance can potentially become an unlimited source of clean and renewable energy if a way could be found to greatly increase the efficiency of solar energy conversion. Today, the power conversion efficiency of the standard photovoltaic solar cells based on a single p-n junction, in which one photon generates one electron-hole pair, does not exceed the Shockley-Queisser limit5 of 32%. The major limiting factor is connected with a transfer of the largest part of the energy of solar photons into heat, because such a cell utilizes only part of the absorbed photon energy equal to the free energy available from the semiconductor energy gap. One of the possibilities to increase the efficiency of photovoltaic conversion is to produce a second electron-hole pair through impact ionization of the valence band.6
Impact ionization is a process during which an electron
with kinetic energy larger than the semiconductor energy
gap excites a second electron from the valence band creating
an electron-hole pair.7-9
Strong confinement of carriers, however, significantly
enhances the Coulomb coupling because quasi momentum
is a bad quantum number in nanocrystals (NCs) and all
carriers are localized in the same volume. It was shown both
theoretically11,12
In bulk, both the direct and inverse Auger processes can be considered in the framework of perturbation theory7-10 because final states undergo fast decay into a continuous spectrum of the three-dimensional space. The strong confinement in NCs not only increases the strength of the multielectron Coulomb interaction but also changes the physics of various transition processes. In any transitional process the "initial" and "final" states always interact via a Coulomb potential. As a result, in small NCs, the large energy of confined carriers is an insufficient condition for pertubative consideration of the transitions caused by the Coulomb interaction. The perturbative approach can be used only if the decay of the "final" state due to dephasing or energy relaxation is much faster than the transition time. Otherwise, the Coulomb coupling returns the excitation back to the "initial" state mixing the two states into a superposition.
In this Letter, we show that efficient multiple exciton
generation (MEG) by a single photon in NCs is connected
with the formation of new excitations, which are described
as a coherent superposition of single and multiexciton states.
The developed theory uses a time-dependent density matrix
approach, which allows simultaneous consideration of an
arbitrary strength coupling between single and multiexciton
states, different dephasing rates for these states, and short
pulse excitation of NCs. The steady-state solution of the
density matrix equations gives us restrictive conditions for
efficient MEG: the energy relaxation rate of a single exciton
initiated by light,
1, must be slower than both the energy
relaxation rate of the multiexciton,
2, and the rate of
Coulomb coupling between the two states, WC/
, where WC
is the matrix element of Coulomb interaction between the
single and multiexciton states. In the case of strong coupling,
2 < WC/
, the MEG by a short light pulse is accompanied
by quantum beats with the frequency WC/
, which are
connected with the creation of the coherent superposition.
These oscillations are damped in the opposite case of weak
coupling,
2 > WC/
. The MEG, however, can still be very
efficient.
The density matrix approach is the only self-consistent method that takes into account the diverse processes responsible for the MEG in NCs. Although this approach can be applied to NCs with arbitrary symmetry of conduction and valence bands, below we discuss the MEG only in PbSe NCs. Bulk PbSe is a narrow gap semiconductor, in which the energy gap, Eg = 0.28 eV at room temperatures, is determined by the four equivalent L points of the Brillouin zone and where conduction and valence bands have almost mirror symmetry.15 The energy spectrum in each L valley is described very well by the Mitchell and Wallis 4-band theory.16 The energy level structure in PbSe NCs can be calculated using the multiband effective mass theory of Kang and Wise.17 The size dependence of the several lowest electron and hole levels is shown in the inset of Figure 1.18 The energy levels are labeled by a level number, n = 1, 2, 3, ..., and an angular momentum, L = 0(S), 1(P), 2(D) 3(F), 4(G), ....
In order to understand how a single photon creates many excitons, let us first consider a single electron occupying the 2Pe electron level. The reason for this level selection will be clarified later. The calculation shows that in a certain range of NC radii, the energy difference, E2Pe - E1Se, between the 2Pe and the ground 1Se electron levels, is almost equal to the lowest excitation energy of a single electron-hole pair, or the effective energy gap of the NC with radius a: Eg(a) = E1Se - E1Sh. As a result, a single electron occupying the 2Pe level has the same energy as a trion consisting of two electrons and a hole occupying the ground quantum size 1Se,h levels: these resonant electron-hole configurations are shown in Figure 1a. For these two configurations, the calculated size dependence of the total energy is shown in Figure 1b. The size dependencies shown in Figure 1b are simplified. Although the Kang and Wise model17 gives different energies for the nLL+1/2 and nLL-1/2 levels with different total angular momenta J = L ± 1/2, we do not show separately the fine structure of the levels connected with spin-orbit splitting. In addition, the intervalley interaction splits the 24 times degenerate P and 40 times degenerate D states forming "P" and "D" bands. An additional splitting can be caused by the effects of nonspherical NC shape, differences in the surface facets, and surface passivation. Not withstanding, one can see that the energy of the 2Pe electron is very close to the energy of the trion over the whole range of NC sizes, which are important for applications.
On the other hand, the calculations of the Coulomb matrix element between left (2Pe) and right (1Se1Se1Sh) multielectron configurations in Figure 1a show that the two states are coupled because the matrix element is not zero. Generally, an average energy of interparticle Coulomb interaction is smaller than a typical energy of a particle confined in a small NC because the energy of confinement increases as 1/a2 while the Coulomb energy only as 1/a with a decrease of the NC radius a. In the lowest order perturbation theory, the interaction can be considered in terms of the direct or inverse (impact ionization) Auger process. However, for the states with almost the same energy, the coupling is not small and cannot be considered perturbatively. The superposition of the single electron 2Pe state and the 1Se1Se1Sh trion state is an eigenstate of the total multielectron Hamiltonian of a NC and these states cannot be described within a single particle approximation.
Similar consideration can be applied to all other single
electron levels with an energy larger than the energy of the
2Pe state. As an example, in Figure 1, we show the
multielectron configuration and the total energy of the 1Pe1Se1Sh trion state which creates a coherent superposition with
the 2De electron level. A single electron state with energy
larger than (n + 1)Eg(a) where n
2 can not only be coupled
with trions but also can create a superposition with multielectron excitations consisting of n holes and n + 1 electrons.
In PbSe NCs, similar consideration can be applied to holes
due to the mirror symmetry of the valence and conduction
bands. This means that all hole states with energy larger than
2Eg(a) also form superpositions with multi-electron-hole
states.
Let us consider now an optical excitation of these mixed
states in NCs. A single photon can only generate a single
electron hole pair which is not an eigenstate of the multielectron Hamiltonian. From the above analysis of single
carrier states, it follows that a single electron-hole pair state
(an exciton) is coupled with multiexciton states. The corresponding eigenfunctions of the multielectron Hamiltonian
can be generally written




ex, biexciton,
bi-ex,
triexciton,
tr-ex, etc. This implies that a direct optical
excitation of the eigenstates would create a superposition of
single and multiexcitons in NCs.
The coupling between single and multiexciton states,
however, does not change the absorption coefficient of a NC,
. Indeed, the absorption coefficient

is the momentum operator, and A
is the vector potential
of a photon with the frequency
. The straightforward
calculation shows that the matrix elements, <
(n)
A
0>, are
reduced to the matrix elements between the NC vacuum state,
0>, and a single exciton component of the wave function,


ex>. Due to the completeness of the multiexciton basis,
n

2 = 1, the absorption coefficient in eq 2 is determined by unperturbed exciton states and it is not affected
by the coupling with the multiexcitons.
Equation 2 also shows that the interband optical selection rules are not affected by the multiexciton coupling to a first-order approximation. The conservation of the selection rules explains the threshold values for very efficient MEG. This threshold was measured to be ~3Eg(a) in PbSe, PbS, and PbTe NCs1-4 and ~2.5Eg(a) in CdSe NCs for some range of NC sizes;19 for the ensuing discussion we focus on PbSe and CdSe NCs. The analysis of the coupling of the single electron state with the band edge trions (see Figure 1a) and the energy spectrum shows that the 2Pe electron levels are the first ones which have sufficient energy to generate the ground-state trion. The optical excitation of the 2Pe state is caused by the 2Pe-2Ph (PbSe) and 2Pe-1P3/2 (CdSe) electron-hole transitions, whose energies are very close to the observed efficient MEG threshold in PbSe and CdSe NCs.
For strongly coupled superposition of single and multiexciton states generated by light, the question of MEG efficiency is reduced to the question of the state relaxation. The single and multiexciton components of the superposition have different decay rates, and the ratio of these rates determines what a single photon creates: a single exciton or a multiexciton.
The initial excitation of strongly coupled multi-exciton
states by a short light pulse and the following complex
relaxation of this state can be consistently described by the
density matrix method. Here, we consider only the strongly
coupled excitons and biexcitons which limits the photon
excitation energy, 
, to the range 3Eg(a)

< 4Eg(a)
in PbSe NCs. According to the selection rules, a photon
generates a nLhnLe electron-hole pair-the exciton-in NCs
with completely filled valence bands. From now on we will
use the following notations: one exciton
1> =
nLhnLe> and
zero exciton
0> states. The single exciton created by the
photon is coupled with the two-electron two-hole configurations, which are the excited biexciton states: 
> =
nLh,
> and 
> =
nLe,
>. In these biexciton states, one
charge occupies the initial single electron/hole level
nLe/h>,
while the other three charges form the positively or negatively charged trion 
>. The electron-hole configurations of the trions 
> =
1Se1Se1Sh> and 
> =
1Pe1Se1Sh>, coupled to the 2Pe and 2De electron levels, respectively,
are shown in Figure 1a. The trion configurations 
>
coupled with holes can be obtained by the permutation of
"e" and "h" indexes.
The coupling constants of both biexciton states 
> to
the initial single exciton are equal to each other. This
symmetry allows us to introduce the symmetric and antisymmetric superpositions of biexciton states:
2>
(
>
+ 
>)/21/2 and (
> - 
>)/21/2. The new basis
significantly simplifies the density matrix equation, because
the antisymmetric superposition is uncoupled from the single
exciton state. Both the single and two-exciton excited states
relax to the ground states,
ex> and
bi>, of a one exciton
and a biexciton, respectively. The coupling between the
excited states and the ground states is negligibly weak. In
the basis of the five states, which control the major physical
processes leading to MEG, the 5 × 5 time dependent density
matrix,
is governed by the following equations:








10 =
,
20 =
, and
12 =
are the off-diagonal components of the density matrix describing the phase coherence
between the basis states. Here in eq 3, E1 is the energy of
the allowed optical transition generating the nLenLh exciton,
V is the matrix element of the optical transition, and
12 is
the difference between the energies of a single electron (hole)
and the trion coupled to this electron (hole). The decay rates
of the excited exciton and biexciton,
1 and
2, are much
higher than the decay rates of the ground exciton and
biexciton:
ex and
bi. The radiative decay time of excitons
in PbSe NCs, 1/
ex is on the order of 100 ns.20 The biexciton
decay is mainly determined by the nonradiative Auger
recombination, which in PbSe NCs has typical times 1/
bi
on the order of 20-100 ps.1 The solution of eq 3 provides
a complete time dependent description of MEG in PbSe NCs
under arbitrary excitation conditions.
The effect of the MEG by a single photon could be utilized in solar cell elements only if the photoexcited carriers are extracted from the nanocrystals prior to undergoing the nonradiative Auger recombination. The nonradiative Auger recombination also limits opportunities to measure the carrier multiplication. Experimentally, the MEG was determined from the time-dependent change of the band edge absorption bleach and the photoinduced intraband infrared absorption after short pulse excitation.1-4 The efficiency of the MEG can be determined by the difference in the transmission or the photoinduced intraband absorption caused by one exciton and multiexciton populations.
To calculate the efficiency of the MEG, we should
compare populations of the ground biexcitons, Nbi, and the
single excitons, Nex, during time, t, which is much longer
than the relaxation times of the excited states (1/
1 and 1/
2)
but is much shorter than the relaxation time of the band edge
excitons (1/
ex and 1/
bi): 1/
1
1/
2
t
1/
bi
1/
ex.
For this time interval we can neglect the terms proportional
to
ex and
bi and find a "steady state" solution of eq 3 by
setting the left-hand side of this equation to zero. The
description of efficiency of the MEG by a single photon
requires the solution in the lowest order of optical excitation,
V. This approach gives the ratio of the band edge exciton
and biexciton populations, which does not depend on the
light intensity

2 is the probability of the population of the excited
biexciton state via its Coulomb coupling to the single exciton
state excited by a photon
2(
12) has a Lorentzian shape.
Its maximum value P1
2(0) at zero detuning,
12 = 0, is
always smaller than 1. The coupling constant, WC, appears
in the denominator due to the dynamical broadening of the
transition.21 For small coupling, WC/
1,
2, the width of
the resonant transition is determined by the fastest of the
two decay rates,
1 or
2. The transition probability P1
2(0)
4
/[
2
2(
1 +
2)] is also small for the weak coupling.
Equation 4 shows that efficient MEG-the predominant
generation of multiexcitons-is possible only if the relaxation
rate of the biexciton is much larger than that of the exciton:
2
1, because P1
2
1. For strong coupling, the transition
probability saturates at P1
2 = 1 and the population ratio
approaches its maximum
2/
1. This result has a transparent
physical meaning: for a strongly coupled superposition state,
the populations of Nbi and Nex are controlled by the state
decay into two independent thermalization channels. However, MEG can be efficient even for a weak coupling regime,
WC/
2. In this case Nbi/Nex = 4
/(
2
2
1) can be
much larger than unity ifWC/
1. The relative population
Nbi/Nex is determined by the ratio of the biexciton creation
rate, (2WC/
)2/
2, to the direct exciton relaxation rate,
1. In
Figure 2, we show the MEG quantum yield, QY = (2Nbi +
Nex)/(Nbi + Nex) × 100%, defined in refs 1 and 2 as a function
of the coupling strength calculated in the photon energy
interval where no more than two electron-hole pairs can
be generated. One can see that the QY approaches its
maximum value of (2
2 +
1)/(
2 +
1) × 100% in the range
of coupling 0.4 < WC/(
2) < 1 for comparable values of
1 and
2. However, for
1/
2 < 0.01 the QY approaches
200% even if the coupling is small.
The above analysis of the QY was conducted for the
resonant coupling where WC,
2 >
12. Equation 5 shows
clearly that detuning from the resonance reduces the efficiency of MEG. As a result, the NC size distribution always
decreases the average efficiency of MEG. The exciton and
biexciton relaxation rates should be size independent for
small size dispersion of NCs. This allows us to estimate the
magnitude of this decrease in the efficiency by averaging
P1
2(
12) over detuning
12 energy distribution, which we
assume has a Lorentzian form

0 is the average detuning for the average size and
is the detuning dispersion for the size dispersion in the NC
ensemble; and
= (
(1 +
1/
2) + (
1 +
2)2
2/4)1/2.
One can see that even in the resonance case:
0 = 0, the
size dispersion leads to an additional decrease of the MEG
efficiency by the factor
/(
+
). The effect of the size
dispersion on the QY is shown in Figure 2 by the dashed
and dotted lines.
As we have mentioned above in the experiments,1-4 MEG
has been observed by measuring the bleach of the optical
absorption at the band gap frequency. Although the initially
excited exciton, whose energy is above the MEG threshold,
does not directly populate the states at the band gap, the
bleach increases rapidly after the excitation. The time scale
of the bleach evolution should provide the information about
the strength of the coupling between the initially excited state
and the multiexcitons which populate the low energy states
at the band gap. The effective MEG leads to the bleach that
exceeds significantly the bleach of the single band edge
exciton. In the excitation frequency range where only two
electron hole pairs can be generated, the relative change of
the band edge absorption coefficient connected with filling
of the lowest 1 Se,h electron and hole levels can be written
as

8 and n1Sh
8 are the occupation numbers of the 8-fold
degenerate 1Se and 1Sh states in PbSe nanocrystals. Calculation shows that F1 = 0, Fex = 1/4, and Fbi = 1/2, while F2
= 3/8 and F2 = 1/4 for the 2Pe-2Ph and 2De-2Dh
excitations, respectively.
Using eq 3, we find the time dependence of the diagonal
components of the density matrix, N2, Nex, and Nbi after a
short pulse excitation of the 2Pe - 2Ph transition and calculate
the time dependence of the band edge absorption bleach,
-
/
(see Figure 3). Figure 3 shows that the strong
coupling (WC/
>
2)significantly shortens the bleach rise
time ~
/WC and leads to quite pronounced oscillations
(quantum beats) connected with the creation of the coherent
superposition of the single and biexciton excited states. The
coherent oscillations become overdamped even for a relatively strong coupling if WC ~
2, and the coupling still
substantially mixes the exciton states. In the weak coupling
regime, WC/
<
2, the bleach rise time is slowed down by
the biexciton decay rate, and it is proportional to
2
2/
.
The detuning also affects the bleach rise time behavior. Generally, detuning increases the frequency of the beats and slows down the formation of coherent superposition. As a result the NC size dispersion washes out the pronounced beats and slows down the average rise of the bleach signal.
Now let us discuss the parameters of our coherent
superposition model. We begin with the most important
parameter: the matrix element, WC, which describes the
Coulomb coupling between an electron and a negatively
charged trion (see Figure 1a). To describe this coupling, we
implement the approach used for the description of Auger
processes in exciton complexes10 and nanocrystals.11 In this
approach, an electron occupying a nLe level of the conduction
band always interacts with another electron that occupies a
m
level of the hole in the valence band via a direct
Coulomb potential. As a result of this interaction, both
particles undergo the following virtual transition: the first
electron goes to another level of conduction band, nLe
k
, and the electron from the valence band is transferred to
the conduction band, m
i
, producing an exciton.
The exciton and the electron form a negatively charged trion.
A similar effect occurs with the hole, which becomes coupled
with the positively charged trion. The interaction strength
between the negative (positive) trion and the initial electron
(hole) is determined by the Coulomb matrix element

is the effective dielectric constant and r1 and r2 are
the coordinates of the first and second electrons, respectively.
The Coulomb interaction mixes the trion wave functions with
the single electron and hole wave functions. In NCs the
eigenfunctions of the multielectron nanocrystal Hamiltonian
can be always written as

;k
,i
)
0. For the trions which are created by
the excitation of
1Se1Sh excitons the initial electron cannot change its angular
momentum by more than 1, and therefore WC(nLe,1Sh;
k
,1Se) ~
, where
i,j is the Kronecker symbol.
Figure 4 shows the size dependence of the matrix elements
for resonant coupling of 2Pe,h and 2De,h states with 1Se,h1Se,h1Sh,e and 1Pe,h1Se,h1Sh,e trions, which were calculated
for bare Coulomb interaction with the dielectric constant
= 1. As we have mentioned above, due to a weak spin-orbit coupling, the P levels are split into the P1/2 and P3/2
levels and the D levels into D3/2 and D5/2. This splitting
increases the number of possible superposition states to 2
and 3 for the 2P and 2D levels, respectively. The splitting
of these states is not significant, and in Figure 4 we show
the average value of WC for the 2P and 2D manifolds.
How large, however, is the screening of the Coulomb
potential in NCs? It is clear, that phonons do not contribute
to the charge screening because the typical frequency of
carrier motion is much larger than the phonon frequencies,
and
in the matrix element WC is a high-frequency dielectric
constant controlled by the electron polarization. The high-frequency dielectric constant in bulk narrow gap semiconductors, like PbSe, is inversely proportional to the semiconductor energy gap. In PbSe nanocrystals the effective energy
gap increases up to three times from its bulk value with a
decreasing radius, and this effect should decrease 
. Due
to the discrete character of electron-hole energy spectrum
in nanocrystals, the self-consistent consideration of this effect
is complicated because different multielectron configurations
play a role in the screening for the various effects and
processes.
As we determined above, efficient MEG requires the rate
of exciton relaxation
1 to be much slower than the rate of
biexciton relaxation
2. These characteristics are not yet
defined, however, because despite almost 20 years of
research, we still do not have a proper description of the
major mechanisms of carrier relaxation in NCs. The energy
separation between electron levels and hole levels in PbSe
NCs is significantly larger than typical phonon energies in
semiconductors. Theoretically, carrier relaxation in NCs
should be strongly suppressed because the relaxation should
be accomplished by a simultaneous emission of many
phonons, a process which has a very low probability. This,
however, contradicts experiments that measured single
exciton relaxation time to be on the order of several
picoseconds. Currently, there is no conventional explanation
how carriers overcome the phonon bottleneck during their
relaxation.
Only recently the Klimov,22 Guyot-Sionnest,23 and Wise24 groups reported several breakthroughs in their studies of carrier thermalization in CdSe and PbSe NCs. First, all these studies show that carrier relaxation is faster in small NCs, despite the rise in level spacing. This suggests a polar character of carrier interaction with phonons, which increases with decreasing NC size. Studies of electron relaxation from the 1P to 1S levels of PbSe NCs show a strong effect of the surface ligands that helps overcome the phonon bottleneck.23 Finally, the efficient multiphonon relaxation between these levels has been reported in ref 22 to be triggered at high temperature by a large, size-dependent intraband Huang Rhys parameter. The origin of this effect, however, is not yet known.
Although the major mechanism of carrier thermalization
in NCs is not known, we find that the biexciton relaxation
rate is much faster than the exciton relaxation rate assuming
that the relaxation rate for various electron-hole pair
configurations is proportional to their coupling with phonons.
Our calculations show that polar interactions of intrinsic
semiconductor phonons in CdSe and PbSe NCs with asymmetric e-h pair configuration are 10 to 40 times stronger
than that of their coupling with symmetric electron-hole
pair configurations (nLenLh) created by light. This is because
charge distributions of the optically created electron and hole
compensate each other almost exactly at each point of the
NC, and the NC thus retains its local neutrality even after
exciton creation. As a result, exciton interactions with the
polar optical phonons that are sensing the total charge are
very weak.25 It also is quite obvious that the coupling of
asymmetric e-h configurations with phonons of organic
molecules at the NC surface23 should be significantly stronger
as well. In both cases, weak coupling of symmetric electron-hole pairs created by light with phonons suppresses their
relaxation and could result in the efficient MEG because
condition
1
2 is fulfilled.
Efficient MEG requires also a quite strong coupling
between exciton and biexciton states relative to
1: WC/
1. The fulfillment of this condition satisfies the obvious
requirement that the exciton thermalization time should be
longer than the coupling time between the optically created
exciton and the asymmetric biexciton state.6 Instead of
calculating the exciton relaxation time, we use experimentally
measured results which have been reported in several papers
to be 1/
1 ~ 2-6 ps, depending on the NC size.20,22,24
Comparing the
1 size dependence24 with the size dependence
of WC in Figure 4 corrected relative to the bulk value of
dielectric constant 
= 23, we find that condition WC/
1 is fulfilled even for the lowest estimation of WC. In NCs,
the dielectric constant, 
(a), is smaller than that in bulk,
and consequently the coupling WC is stronger.
We calculate size dependence of the carrier multiplication
quantum yield, QY, using size dependence of
1 measured
in ref 24 and assuming that high-frequency dielectric constant
of NCs, 
(a), is inversely proportional to the energy gap
of NCs 
(a) = 23Eg/Eg(a) like in narrow gap bulk
semiconductors. Here Eg = 0.28 eV is the energy gap of
bulk PbSe. The resulting QY for the size interval from 3.7
to 6.2 nm is shown in Figure 5 for the four ratios of
1/
2.
Note, that calculations are conducted only for the optical
excitation interval, where no more than two electron-hole
pairs can be excited, and excitation frequency follows the
2Pe-2Ph or 2De-2Dh transition energy in each NC size.
Surprisingly, QY does not show any size dependence if we
assume that the ratio
1/
2 does not depend on size. At the
same time, as we expect, the increase of
2/
1 always leads
to the increase of QY. The surprising size independence of
the average number of electron-hole pairs generated via
excitation of the same optical transition is consistent with
the results of experimental measurements, which show the
universal dependence of the QY on the one parameter only:3

/Eg(a), where 
is the exciting photon energy.
In ref 24, the single exciton relaxation time, 1/
1, was
measured at room tempeartures. The relaxation rate in PbSe
NCs, however, is strongly suppressed at tempertaures below
130-170 K.22 The suppression should lead to the larger value
of QY at low temperatures. Our calculations show also that
the supression of the biexciton relaxation rate,
2, increases
the rise time of the bleach. This suggests that a temperature
decrease may slow down the bleach rise time if there is a
correlation between temperature dependence of
2 and
1.
Existing experimental data, unfortunately, do not allow
us to extract the biexciton decay rate
2, and the calculated
WC size dependence does not give us a conclusive answer
to the question if WC > 
2 or WC < 
2. As a result, we
cannot tell if the formation of coherent superposition would
lead to the quantum beats in the band edge transient bleach.
The quantum beats in the band edge transient absorption
connected with formation of the coherent superposition are
generally masked by the bleach from the ground excitons
and biexcitons which are filled in a process of incoherent
thermalization (see eq 7). In addition to the filling factor
bleach there is an instant Stark shift of band edge energy
levels due to their interactions with photoexcited excitons,26
which also obscures the detection of any quantum beats.
Studying the transient bleach of excited interband optical
transitions such as 1Se,h-1Ph,e or 1Pe,h-1Ph,e would allow
one to avoid some of these complications. These transitions
are affected by the coherent coupling of the 2De2Dh exciton
with the excited biexciton
B2Dh,e>, which contains one carrier
occupying the 1Pe,h levels (see Figure 1a). Although the
interband transitions are also affected by the thermalization,
the coherent contribution can be more appreciable because
the relaxation is expected to be fast, and most of the
thermalized excitons should accumulate at the band edge
states.
Due to large energy of photoexcited transitions required for MEG, the discrete character of electron-hole energy spectra in PbSe NCs has never been revealed in the MEG experiments. It still makes sense to study the energy dependence of the MEG near the transitions to the 2Pe,h levels. These are the lowest levels that are strongly coupled with trions, and the level spacing in this range of energies is quite significant. These levels can be excited by optically allowed 2Pe,h-2Ph,e transitions with energy close to 3Eg(a) or by optically forbidden 1Se,h-2Ph,e transitions with energy close to 2Eg(a). The broken selection rules that allow observation of strong 1Se,h-1Ph,e transitions in PbSe NCs should allow also the 1Se,h-2Ph,e transitions, which have the same symmetry. These experiments may reveal resonance-type energy dependence of the MEG efficiency.
To summarize, we have developed a model that explains the MEG of excitons in NCs by a single photon as a result of the formation of a coherent superposition of single and multiexciton states. Within this model the efficient MEG is a consequence of a suppressed thermalization rate of an exciton created by light. Calculations conducted for the set of model parameters estimated for PbSe NCs demonstrate efficient MEG, which is consistent with experimental observations.
In acknowledgment, the authors thank M. C. Beard, R. J. Ellingson, J. C. Johnson, and V. I. Klimov for the multiple stimulating discussions. Al.L.E. was supported by the Office of Naval Research, and A.S. and A.J.N. were supported by the U.S. Department of Energy, Office of Basic Energy Science.
Note Added after ASAP Publication. There was an incorrect affiliation symbol with a name in the author byline, an error in an equation in the text following eq 9, and a modification (from exciton to biexciton) in the third paragraph from the end of the text in the version published ASAP November 1, 2006; the corrected version was published ASAP November 9, 2006.
Center for Computational Material Science, Naval Research Laboratory.
School of Computational Sciences, George Mason University.
Center for Basic Sciences, National Renewable Energy Laboratory.
* Corresponding authors. E-mail: ashabaev@gmu.edu, efros@dave.nrl.navy.mil, arthur_nozik@nrel.gov.
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