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Synthesis and Characterization of Boron-Doped Single-Wall Carbon Nanotubes Produced by the Laser Vaporization Technique
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Abstract

We present the first successful high-yield laser vaporization synthesis of high-quality boron-doped single-wall carbon nanotubes (B-SWNTs). Boron was loaded into graphite targets in the form of elemental B as well as nickel boride (NiB) and vaporized in a laser-oven apparatus in both Ar and N2 ambients. Although targets containing elemental B produced no or low yields of SWNTs, the NiB catalyst in N2 produced SWNT bundles comparable in quality to the best pure-carbon SWNTs produced from traditional Ni/Co catalysts. A variety of different samples were analyzed by transmission electron microscopy, Raman spectroscopy, X-ray diffraction, and nanoprobe electron energy loss spectroscopy (EELS). Boron was found to be doped substitutionally in the SWNT lattice at contents up to 1.8 at % by EELS. The 13C NMR chemical shift of SWNT nuclei is affected by boron doping by shifting to higher frequency, as expected for p-type doping. The EELS and NMR data exclude the possibility of B and N codoping. Aspects of the growth mechanism are discussed.
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This article has been cited by 7 ACS Journal articles (5 most recent appear below).

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History
- Published In Issue May 16, 2006
- Received January 24, 2006
Revised Manuscript Received March 17, 2006
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