Synthesis and Characterization of Boron-Doped Single-Wall Carbon Nanotubes Produced by the Laser Vaporization Technique

Jeff L. Blackburn,* Yanfa Yan, Chaiwat Engtrakul, Philip A. Parilla, Kim Jones, Thomas Gennett, Anne C. Dillon, and Michael J. Heben
Center for Basic Science, National Renewable Energy Laboratory, 16253 Denver West Parkway, Golden, Colorado 80401, and Rochester Institute of Technology, 85 Lamb Memorial Drive, Rochester, New York, 14623
Chem. Mater., 2006, 18 (10), pp 2558–2566
DOI: 10.1021/cm060192i
Publication Date (Web): April 14, 2006
Copyright © 2006 American Chemical Society

Abstract

Abstract Image

We present the first successful high-yield laser vaporization synthesis of high-quality boron-doped single-wall carbon nanotubes (B-SWNTs). Boron was loaded into graphite targets in the form of elemental B as well as nickel boride (NiB) and vaporized in a laser-oven apparatus in both Ar and N2 ambients. Although targets containing elemental B produced no or low yields of SWNTs, the NiB catalyst in N2 produced SWNT bundles comparable in quality to the best pure-carbon SWNTs produced from traditional Ni/Co catalysts. A variety of different samples were analyzed by transmission electron microscopy, Raman spectroscopy, X-ray diffraction, and nanoprobe electron energy loss spectroscopy (EELS). Boron was found to be doped substitutionally in the SWNT lattice at contents up to 1.8 at % by EELS. The 13C NMR chemical shift of SWNT nuclei is affected by boron doping by shifting to higher frequency, as expected for p-type doping. The EELS and NMR data exclude the possibility of B and N codoping. Aspects of the growth mechanism are discussed.

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History

  • Published In Issue May 16, 2006
  • Received January 24, 2006
    Revised Manuscript Received March 17, 2006

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