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Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO₂, TiO₂, ZnO, Nb₂O₅, SnO₂, In₂O₃) Films

Ryuzi Katoh,*^† Akihiro Furube,^† Toshitada Yoshihara,^† Kohjiro Hara,^† Gaku Fujihashi,^‡ Shingo Takano,^‡ Shigeo Murata,^† Hironori Arakawa,^† and M. Tachiya^§

Photoreaction Control Research Center (PCRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba, Ibaraki 305-8565, Japan, and Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi, Funabashi, Chiba 274-8601, Japan

J. Phys. Chem. B, 2004, 108 (15), pp 4818–4822

DOI: 10.1021/jp031260g

Publication Date (Web): March 23, 2004

Corresponding author. E-mail: r-katoh@aist.go.jp.

†

PCRC, AIST.

‡

Sumitomo Osaka Cement Co., Ltd.

AIST.

Abstract

The efficiency of electron injection from excited N3 dye (cis-bis-(4,4‘-dicarboxy-2,2‘-bipyridine) dithiocyanato ruthenium(II), Ru(dcbpy)₂ (NCS)₂), into various nanocrystalline semiconductor (ZrO₂, TiO₂, ZnO, Nb₂O₅, SnO₂, In₂O₃) films was studied by transient absorption spectroscopy. For TiO₂, ZnO, Nb₂O₅, SnO₂, or In₂O₃ films, injection efficiencies were found to be very high; for ZrO₂ film, the efficiency was very low. These findings indicate that electron injection occurs efficiently if the LUMO level of N3 dye is located sufficiently far above the bottom of the conduction band of the semiconductor film. On the basis of the results, we discuss the reason TiO₂ exhibits higher solar cell performance than other materials.

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Published In Issue April 15, 2004
Received November 20, 2003

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Article

Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO₂, TiO₂, ZnO, Nb₂O₅, SnO₂, In₂O₃) Films