Prev. Article Next Article Table of Contents

Letter

Self-Organized GaN Quantum Wire UV Lasers

Supporting Info

Heon-Jin Choi,^†^‡ Justin C. Johnson,^† Rongrui He,^† Sang-Kwon Lee,^†^‡ Franklin Kim,^† Peter Pauzauskie,^† Joshua Goldberger,^† Richard J. Saykally,^† and Peidong Yang*^†^‡

Department of Chemistry, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

J. Phys. Chem. B, 2003, 107 (34), pp 8721–8725

DOI: 10.1021/jp034734k

Publication Date (Web): July 19, 2003

Abstract

Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al−Ga−As−P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al−Ga−N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al−Ga−N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.

View: Full Text HTML | Hi-Res PDF

Tools

SciFinder Links

Explore by:

Author of this Article Any Author Research Topic

History

Published In Issue August 28, 2003
Received March 21, 2003
Revised June 1, 2003

Recommend & Share

Related Content

Watching GaN Nanowires GrowNano Letters
- Watching GaN Nanowires Grow
  Eric A. Stach, Peter J. Pauzauskie, Tevye Kuykendall, Joshua Goldberger, Rongrui He, and Peidong Yang
  Nano Letters 2003 3 (6), pp 867–869
  Abstract: We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self-catalytic vapor−liquid−solid (VLS) mechanism. High temperature thermal decomposition of GaN in a vacuum yields nanoscale Ga liquid ...
  Abstract | Full Text HTML | Hi-Res PDF
Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross SectionsNano Letters
- Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
  Tevye Kuykendall, Peter Pauzauskie, Sangkwon Lee, Yanfeng Zhang, Joshua Goldberger, and Peidong Yang
  Nano Letters 2003 3 (8), pp 1063–1066
  Abstract: High-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the first time. Excellent substrate coverage was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. ...
  Abstract | Full Text HTML | Hi-Res PDF
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic NanodevicesNano Letters
- Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
  Zhaohui Zhong, Fang Qian, Deli Wang, and Charles M. Lieber
  Nano Letters 2003 3 (3), pp 343–346
  Abstract: Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed chemical vapor deposition. Nanowires prepared on c-plane sapphire substrates were found to grow normal to the substrate, and transmission electron microscopy studies ...
  Abstract | Full Text HTML | Hi-Res PDF

Letter

Self-Organized GaN Quantum Wire UV Lasers

Abstract

Tools

SciFinder Links

History

Recommend & Share

Related Content

Watching GaN Nanowires Grow

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

Other ACS content by these authors:

JOURNALS

BOOKS

MAGAZINE

COMMUNITIES

DIRECTORIES & DATABASES