Photoemission Studies of Polythiophene and Polyphenyl Films Produced via Surface Polymerization by Ion-Assisted Deposition

Sanja Tepavcevic, Amanda T. Wroble, Mark Bissen, Daniel J. Wallace, Yongsoo Choi, and Luke Hanley*
Department of Chemistry (m/c 111), University of Illinois at Chicago, Chicago, Illinois 60607-7061, and Synchrotron Radiation Center, University of WisconsinMadison, Stoughton, Wisconsin 53589-3097
J. Phys. Chem. B, 2005, 109 (15), pp 7134–7140
DOI: 10.1021/jp0451445
Publication Date (Web): March 12, 2005
Copyright © 2005 American Chemical Society

 University of Illinois at Chicago.

,

 University of Wisconsin−Madison.

,
*

 Author to whom correspondence should be addressed. E-mail: LHanley@uic.edu.

Abstract

Conducting polymer films are grown by mass-selected, hyperthermal thiophene ions coincident on a surface with a thermal beam of organic monomers of either α-terthiophene (3T) or p-terphenyl (3P) neutrals. Mass spectrometry and X-ray photoelectron spectroscopy previously verified polymerization of both 3T and 3P by 200 eV C4H4S+ during surface polymerization by ion-assisted deposition (SPIAD). The electronic structure of these films are probed here by ultraviolet photoelectron spectroscopy (UPS) and polarized near-edge X-ray absorption fine structure spectroscopy (NEXAFS) and compared with similar spectra of evaporated films. The conducting polymer films formed by SPIAD display new valence band features resulting from a reduction in both their band gap and barrier to hole injection, which are calculated from the occupied and unoccupied valence band states measured by UPS and NEXAFS. These changes in film electronic structure result from an increase in the electron conjugation length and other changes in film structure induced by SPIAD.

Tools

History

  • Published In Issue April 21, 2005
  • Received October 25, 2004
    Revised February 3, 2005

Recommend & Share