Mechanistic Studies of Surface Polymerization by Ion-Assisted Deposition

Wen-Dung Hsu, Sanja Tepavcevic, Luke Hanley,* and Susan B. Sinnott*
Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, and Department of Chemistry, University of Illinois at Chicago, Chicago, Illinois 60607-7061
J. Phys. Chem. C, 2007, 111 (11), pp 4199–4208
DOI: 10.1021/jp067266y
Publication Date (Web): February 27, 2007
Copyright © 2007 American Chemical Society

 University of Florida.

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 University of Illinois at Chicago.

,
*

 Corresponding authors. E-mail:  lhanley@uic.edu; ssinn@mse.ufl.edu.

Abstract

Polythiophene is a conductive polymer that has attracted much interest in recent years because its properties are desirable for applications that include light-emitting diodes, field-effect transistors, and photovoltaics. Optimization of the performance of polythiophene in these devices requires the development of processing methods that can simultaneously control its chemistry and morphology on the nanometer scale. One such method is surface polymerization by ion-assisted deposition (SPIAD) in which conducting polymer thin films are grown on substrates by the simultaneous deposition of hyperthermal polyatomic ions and thermal neutrals in vacuum. Here, mass-selected beams of thiophene ions are deposited on α-terthiophene oligomers in experiments, and density functional theory−molecular dynamics (DFT−MD) simulations are carried out to determine the dominant mechanisms responsible for the SPIAD process. Both neutral and positively charged systems are considered in the simulations in order to assess the effect of charge on the results. The experimental results show that polymerization occurs preferentially under a narrow set of ion energy and ion/neutral ratio conditions. The DFT−MD simulations illustrate the manner in which ion energies affect polymerization and reveal how secondary chemical reactions can substantially modify both the thin film and the substrate.

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History

  • Published In Issue March 22, 2007
  • Received November 3, 2006
    Revised January 15, 2007

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