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Letter

Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films

A. J. Pollard^†, R. R. Nair^‡, S. N. Sabki^†, C. R. Staddon^†, L. M. A. Perdigao^†, C. H. Hsu^†, J. M. Garfitt^†, S. Gangopadhyay^†, H. F. Gleeson^‡, A. K. Geim^‡ and P. H. Beton*^†

School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, U.K., and School of Physics and Astronomy, University of Manchester, Schuster Laboratory, Brunswick Street, Manchester M13 9PL, U.K.

J. Phys. Chem. C, 2009, 113 (38), pp 16565–16567

DOI: 10.1021/jp906066z

Publication Date (Web): September 1, 2009

* To whom correspondence should be addressed. E-mail: peter.beton@nottingham.ac.uk. Tel: Tel: +44 115 9515129. Fax: +44 115 9515180., †

University of Nottingham.

, ‡

University of Manchester.

Abstract

Graphene films have been formed by annealing Ni thin films at 800 °C under vacuum conditions. The Ni thin films are deposited on Si/SiO₂ and, following annealing, have a polycrystalline morphology with grain sizes on the order of 1 μm. Following growth, the Ni is removed by etching, and the graphene is transferred as a single continuous layer onto a separate surface. The fraction of monolayer graphene is investigated using optical and electron microscopy and Raman spectroscopy and is shown to be >75%.

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History

Published In Issue September 24, 2009
Article ASAPSeptember 01, 2009
Received: June 29, 2009
Revised: August 4, 2009

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Letter

Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films

Abstract

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History

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Growth of Semiconducting Graphene on Palladium

Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

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