Systematic Density Functional Study of the Adsorption of Transition Metal Atoms on the MgO(001) Surface

Ilya Yudanov,§ Gianfranco Pacchioni, Konstantin Neyman, and Notker Rösch*
Lehrstuhl fr Theoretische Chemie, Technische Universitt Mnchen, D-85747 Garching, Germany, and Dipartimento di Chimica Inorganica, Metallorganica e Analitica, Universit di Milano, via Venezian 21, 20133 Milano, Italy
J. Phys. Chem. B, 1997, 101 (15), pp 2786–2792
DOI: 10.1021/jp962487x
Publication Date (Web): April 10, 1997
Copyright © 1997 American Chemical Society

 Technische Universität München.

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 Permanent address:  Boreskov Institute of Catalysis, Russian Academy of Sciences, 630090 Novosibirsk, Russian Federation.

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 Università di Milano.

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*

In papers with more than one author, the asterisk indicates the name of the author to whom inquiries about the paper should be addressed.

Abstract

We report the results of nonrelativistic and relativistic gradient-corrected density functional calculations on the interaction of single transition metal atoms with the oxygen sites of the regular MgO(001) surface. The surface has been represented by stoichiometric clusters of ions embedded in large arrays of point charges. Two adsorption sites have been considered, the on-top adsorption on the oxide anion and the bridge adsorption over two adjacent oxide anions; on-top adsorption is found to be energetically preferred. The metal atoms considered are Cr, Mo, W; Ni, Pd, Pt; Cu, Ag, and Au. These adsorbates can be classified into two groups depending on the strength of the bond with the surface. Cu, Ag, Au, Cr, and Mo exhibit weak or very weak bonds of the order of one-third of an electronvolt; their interaction is due to polarization and dispersion with little mixing with the substrate orbitals. Ni, Pd, Pt, and W, on the other hand, form relatively strong bonds, of the order of 1 eV, with the oxide anions. This bond has a covalent polar nature with little charge transfer from the metal to the oxide. This is consistent with the fact that MgO is a wide gap insulator with very weak oxidizing power. The consequences of the different bonding mechanisms for the growth of metal particles on this oxide surface are discussed.

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History

  • Published In Issue April 10, 1997
  • Received August 14, 1996
    Revised October 9, 1996

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