Next Article Table of Contents

Letter

Local Gating of Carbon Nanotubes

M. J. Biercuk, N. Mason, and C. M. Marcus*

Department of Physics, Harvard University, Cambridge, Massachusetts 02138

Nano Letters, 2004, 4 (1), pp 1–4

DOI: 10.1021/nl034696g

Publication Date (Web): November 19, 2003

Corresponding author.

Abstract

Local effects of multiple electrostatic gates placed beneath carbon nanotubes grown by chemical vapor deposition (CVD) are reported. Single-walled carbon nanotubes were grown by CVD from Fe catalyst islands across thin Mo “finger gates” (150 nm × 10 nm). Prior to tube growth, several finger gates were patterned lithographically and subsequently coated with a patterned high-κ dielectric using low-temperature atomic layer deposition. Transport measurements demonstrate that local finger gates have an effect that is distinct from that of a global backgate.

View: Full Text HTML | Hi-Res PDF

Tools

SciFinder Links

History

Published In Issue January 14, 2004
Received August 24, 2003
Revised Manuscript Received October 30, 2003

Recommend & Share

Related Content

Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect TransistorsNano Letters
- Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors
  M. Radosavljević, M. Freitag, K. V. Thadani, and A. T. Johnson
  Nano Letters 2002 2 (7), pp 761–764
  Abstract: We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs) and used them in nanoscale memory cells. n-Type transistors are achieved by annealing nanotubes in hydrogen gas and contacting them by cobalt electrodes. ...
  Abstract | Full Text HTML | Hi-Res PDF
Locally Addressable Tunnel Barriers within a Carbon NanotubeNano Letters
- Locally Addressable Tunnel Barriers within a Carbon Nanotube
  M. J. Biercuk, N. Mason, J. M. Chow, and C. M. Marcus
  Nano Letters 2004 4 (12), pp 2499–2502
  Abstract: We report the realization and characterization of independently controllable, fabricated tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed near ...
  Abstract | Full Text HTML | Hi-Res PDF
Extraordinary Mobility in Semiconducting Carbon NanotubesNano Letters
- Extraordinary Mobility in Semiconducting Carbon Nanotubes
  T. Dürkop, S. A. Getty, Enrique Cobas, and M. S. Fuhrer
  Nano Letters 2004 4 (1), pp 35–39
  Abstract: Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the channel resistance dominates the transport. Transport characteristics are used to ...
  Abstract | Full Text HTML | Hi-Res PDF

Letter

Local Gating of Carbon Nanotubes

Abstract

Tools

SciFinder Links

History

Recommend & Share

Related Content

Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

Locally Addressable Tunnel Barriers within a Carbon Nanotube

Extraordinary Mobility in Semiconducting Carbon Nanotubes

Other ACS content by these authors:

JOURNALS

BOOKS

MAGAZINE

COMMUNITIES

DIRECTORIES & DATABASES