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Ultrafast Carrier Dynamics in Single ZnO Nanowire and Nanoribbon Lasers

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Justin C. Johnson,^† Kelly P. Knutsen,^† Haoquan Yan,^†^‡ Matt Law,^†^‡ Yanfeng Zhang,^†^‡ Peidong Yang,*^†^‡ and Richard J. Saykally*^†

Department of Chemistry, University of California, Berkeley, California 94720 and Materials Science Division, Lawrence Berkeley National Laboratory

Nano Letters, 2004, 4 (2), pp 197–204

DOI: 10.1021/nl034780w

Publication Date (Web): November 26, 2003

Section:

Optical, Electron, and Mass Spectroscopy and Other Related Properties

Abstract

Time-resolved second-harmonic generation (TRSHG) and transient photoluminescence (PL) spectroscopy are utilized to probe the ultrafast creation and subsequent relaxation of excited carriers immediately following band-gap excitation in single ZnO nanowire and nanoribbon lasers. The TRSHG signal consists of a 1−5 ps recovery present only during strong lasing and a 10−80 ps intensity-dependent component. The transient PL response from single structures exhibits an 80 ps decay component independent of pump power (free exciton PL), and a < 10 ps power-dependent component (stimulated emission) that shifts to earlier delay by ca. 10 ps at high pump fluence.

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