The Kondo Effect in C60 Single-Molecule Transistors

Lam H. Yu and Douglas Natelson*
Department of Physics and Astronomy, Rice University, 6100 Main Street, Houston, Texas 77005
Nano Letters, 2004, 4 (1), pp 79–83
DOI: 10.1021/nl034893f
Publication Date (Web): December 9, 2003
Copyright © 2004 American Chemical Society
*

In papers with more than one author, the asterisk indicates the name of the author to whom inquiries about the paper should be addressed.

Abstract

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We have used an electromigration technique to fabricate C60-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low temperatures each transistor acts as a single-electron device in the Coulomb blockade regime. Resonances in the differential conductance indicate vibrational excitations consistent with a known mode of C60. In several devices we observe conductance features characteristic of the Kondo effect, a coherent many-body state comprising an unpaired spin on the molecule coupled by exchange to the conduction electrons of the leads. The inferred Kondo temperature typically exceeds 50 K, and signatures of the vibrational modes persist into the Kondo regime.

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History

  • Published In Issue January 14, 2004
  • Received October 14, 2003
    Revised Manuscript Received November 18, 2003

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