Letter
Locally Addressable Tunnel Barriers within a Carbon Nanotube
Corresponding author. E-mail: marcus@harvard.edu.
Abstract

We report the realization and characterization of independently controllable, fabricated tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed near each kink. Transport measurements indicate that the kinks form gate-controlled tunnel barriers and that gates placed away from the kinks have little or no effect on conductance. The overall conductance of the nanotube can be controlled by tuning the transmissions through the kinks.
View: Full Text HTML | Hi-Res PDF
Tools
-
Add to Favorites
-
Download Citation
-
Email a Colleague -
Permalink
Order Reprints
Rights & Permissions
Citation Alerts
History
- Published In Issue December 08, 2004
- Received August 16, 2004
Revised Manuscript Received October 25, 2004
Cart
80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-κ gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter 

