Gate-Defined Quantum Dots on Carbon Nanotubes

M. J. Biercuk, S. Garaj, N. Mason, J. M. Chow, and C. M. Marcus*
Department of Physics, Harvard University, Cambridge, Massachusetts 02138
Nano Lett., 2005, 5 (7), pp 1267–1271
DOI: 10.1021/nl050364v
Publication Date (Web): June 7, 2005
Copyright © 2005 American Chemical Society
*

In papers with more than one author, the asterisk indicates the name of the author to whom inquiries about the paper should be addressed.

Abstract

Abstract Image

We report the realization of nanotube-based multiple quantum dots that are fully defined and controlled with electrostatic gates. Metallic top-gates are used to produce localized depletion regions in the underlying tubes; a pair of such depletion regions in a nanotube with ohmic contact electrodes defines the quantum dot. Top-gate voltages tune the transparencies of tunnel barriers as well as the electrostatic energies within single and multiple dots. This approach allows precise control over multiple devices on a single tube, and serves as a design paradigm for nanotube-based electronics and quantum systems.

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History

  • Published In Issue July 13, 2005
  • Received February 25, 2005
    Revised Manuscript Received May 25, 2005

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