Well-Aligned Open-Ended Carbon Nanotube Architectures:  An Approach for Device Assembly

Lingbo Zhu, Yangyang Sun, Dennis W. Hess,* and Ching-Ping Wong*
School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive, Atlanta, Georgia 30332, and School of Materials Science & Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332
Nano Lett., 2006, 6 (2), pp 243–247
DOI: 10.1021/nl052183z
Publication Date (Web): January 4, 2006
Copyright © 2006 American Chemical Society

 School of Chemical & Biomolecular Engineering, Georgia Institute of Technology.

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 School of Materials Science & Engineering, Georgia Institute of Technology.

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 Corresponding authors. Dennis W. Hess. Tel:  +86-1-404-894-5922. Fax:  +86-1-404-894-2866. E-mail:  dennis.hess@chbe.gatech.edu; Dr. Ching-Ping Wong. Tel:  +86-1-404-894-8391. Fax:  +86-1-404-894-9140. E-mail:  cp.wong@mse.gatech.edu.

Abstract

Abstract Image

To circumvent the high carbon nanotube (CNT) growth temperature and poor adhesion with the substrates that currently plague CNT implementation, we proposed using CNT transfer technology enabled by open-ended CNTs. The process is featured with separation of CNT growth and CNT device assembly. Field emission testing of the as-assembled CNT devices is in good agreement with the Fowler−Nordheim (FN) equation, with a field enhancement factor of 4540. This novel technique shows promising applications for positioning CNTs on temperature-sensitive substrates and for the fabrication of field emitters, electrical interconnects, and thermal management structures in microelectronics packaging.

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History

  • Published In Issue February 08, 2006
  • Received November 5, 2005
    Revised Manuscript Received December 6, 2005

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