Letter
Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains
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Abstract

We report direct spectroscopic evidence for the formation of one-dimensional (1D) wetting wires (WWs) during the Stransky−Krastanov growth of InGaAs/GaAs quantum dot (QD) chains. The wire-like nature of these 1D WWs was demonstrated by their 1D density of states and absorption anisotropies from the photoluminescence excitation measurements. Two groups of QDs were found sitting on top of these 1D WWs and the traditional two-dimensional wetting layers, respectively, with size-dependent emission polarization anisotropies of ca. 6−25% because of their elongated shapes.
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This article has been cited by 3 ACS Journal articles (3 most recent appear below).

Design of Nanostructure Complexes by Droplet Epitaxy
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Energy Transfer within Ultralow Density Twin InAs Quantum Dots Grown by Droplet Epitaxy
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Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures
Jihoon H. Lee, Zhiming M. Wang, Morgan E. Ware, Kushal C. Wijesundara, Mauricio Garrido, Eric. A. Stinaff and Gregory J. SalamoCrystal Growth & Design2008 8 (6), 1945-1951Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures
Jihoon H. Lee, Zhiming M. Wang, Morgan E. Ware, Kushal C. Wijesundara, Mauricio Garrido, Eric. A. Stinaff and Gregory J. SalamoCrystal Growth & Design2008 8 (6), 1945-1951Fabrication of super low density InGaAs semiconductor ring-shaped nanocrystals is demonstrated on a GaAs (100) surface by using molecular beam epitaxy. Specifically, densities down to 2.3 × 106 cm−2 are fabricated with only self-assembled methods based on ...
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History
- Published In Issue September 13, 2006
- Received February 6, 2006
Revised Manuscript Received July 24, 2006
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