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Letter

Rational Synthesis of p-Type Zinc Oxide Nanowire Arrays Using Simple Chemical Vapor Deposition

Supporting Info

Bin Xiang,^† Pengwei Wang,^‡ Xingzheng Zhang,^‡ Shadi. A. Dayeh,^† David P. R. Aplin,^† Cesare Soci,^† Dapeng Yu,^‡ and Deli Wang*^†

Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

Nano Lett., 2007, 7 (2), pp 323–328

DOI: 10.1021/nl062410c

Publication Date (Web): December 29, 2006

†

Department of Electrical and Computer Engineering, University of California at San Diego.

‡

Electron Microscopy Laboratory, School of Physics, Peking University.

Corresponding author. E-mail: dwang@ece.ucsd.edu.

Abstract

We report, for the first time, the synthesis of the high-quality p-type ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single-crystal phosphorus doped ZnO NWs have their growth axis along the 001 direction and form perfect vertical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at various temperatures and by studying the electrical transport in single NWs field-effect transistors. Comparisons of the low-temperature PL of unintentionally doped ZnO (n-type), as-grown phosphorus-doped ZnO, and annealed phosphorus-doped ZnO NWs show clear differences related to the presence of intragap donor and acceptor states. The electrical transport measurements of phosphorus-doped NW FETs indicate a transition from n-type to p-type conduction upon annealing at high temperature, in good agreement with the PL results. The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and opens up enormous opportunities for nanoscale electronics, optoelectronics, and medicines.