Thermodynamics of Coherently-Strained GexSi1-x Nanocrystals on Si(001):  Alloy Composition and Island Formation

Gilberto Medeiros-Ribeiro* and R. Stanley Williams
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, California 94304, Laboratorio Nacional de Luz Sncrotron, P.O. Box 6192, Campinas SP 13084-971, Brazil
Nano Lett., 2007, 7 (2), pp 223–226
DOI: 10.1021/nl062530k
Publication Date (Web): January 25, 2007
Copyright © 2007 American Chemical Society
*

 Corresponding author. E-mail:  gmedeiros@lnls.br.

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 Hewlett-Packard Laboratories.

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 Laboratorio Nacional de Luz Síncrotron.

Abstract

Abstract Image

We determined the enthalpic and entropic contributions to the thermodynamics of coherently strained nanocrystals grown via deposition of pure Ge on Si(001) surfaces at 600 and 700 °C by analyzing their composition profile and local strain. We found that the free energy associated with the entropy of mixing, which drives GexSi1-x alloy formation, was significantly larger than the relaxation enthalpy that produces the islands. Thus, entropy plays a significant role in the evolution of the size and shape of the islands during growth through the strong thermodynamic drive to form an alloy.

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History

  • Published In Issue February 14, 2007
  • Received October 26, 2006
    Revised Manuscript Received January 9, 2007

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