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Letter

Atomic Structure of Graphene on SiO₂

Masa Ishigami,*^†^‡ J. H. Chen,^†^‡ W. G. Cullen,^†^‡ M. S. Fuhrer,^‡^§ and E. D. Williams^†^‡

Materials Research Science and Engineering Center, Department of Physics, and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742

Nano Lett., 2007, 7 (6), pp 1643–1648

DOI: 10.1021/nl070613a

Publication Date (Web): May 11, 2007

In papers with more than one author, the asterisk indicates the name of the author to whom inquiries about the paper should be addressed.

†

Materials Research Science and Engineering Center, University of Maryland.

‡

Department of Physics, University of Maryland.

Center for Superconductivity Research, University of Maryland.

Abstract

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

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History

Published In Issue June 13, 2007
Received March 14, 2007
Revised Manuscript Received April 19, 2007

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Letter

Atomic Structure of Graphene on SiO₂